IPB65R190C7

IPB65R190C7ATMA1 vs IPB65R190C7 vs IPB65R190C7 65C7190

 
PartNumberIPB65R190C7ATMA1IPB65R190C7IPB65R190C7 65C7190
DescriptionMOSFET N-Ch 700V 49A D2PAK-2MOSFET N-Ch 700V 49A D2PAK-2
ManufacturerInfineonInfineon Technologies-
Product CategoryMOSFETTransistors - FETs, MOSFETs - Single-
RoHSY--
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseTO-263-3--
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage650 V--
Id Continuous Drain Current13 A--
Rds On Drain Source Resistance168 mOhms--
Vgs th Gate Source Threshold Voltage3 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge23 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation72 W--
ConfigurationSingle--
Channel ModeEnhancement--
TradenameCoolMOSCoolMOS C7-
PackagingReelReel-
Height4.4 mm--
Length10 mm--
SeriesCoolMOS C7XPB65R190-
Transistor Type1 N-Channel1 N-Channel-
Width9.25 mm--
BrandInfineon Technologies--
Fall Time9 ns--
Product TypeMOSFET--
Rise Time11 ns--
Factory Pack Quantity1000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time54 ns--
Typical Turn On Delay Time11 ns--
Part # AliasesIPB65R190C7 SP000929424--
Unit Weight0.068654 oz--
Part Aliases-IPB65R190C7ATMA1 SP000929424-
Vds Drain Source Breakdown Voltage-650 V-
Rds On Drain Source Resistance-190 mOhms-
Hersteller Teil # Beschreibung RFQ
Infineon Technologies
Infineon Technologies
IPB65R190C7ATMA1 MOSFET N-Ch 700V 49A D2PAK-2
Infineon Technologies
Infineon Technologies
IPB65R190C7ATMA2 MOSFET N-CH TO263-3
IPB65R190C7ATMA1 RF Bipolar Transistors MOSFET N-Ch 700V 49A D2PAK-2
IPB65R190C7 MOSFET N-Ch 700V 49A D2PAK-2
IPB65R190C7 65C7190 Neu und Original
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