 | | | |
| PartNumber | IPB70N10S3L-12 | IPB70N10S312ATMA1 | IPB70N10S3-12 |
| Description | MOSFET N-Ch 100V 70A D2PAK-2 OptiMOS-T | MOSFET N-Ch 100V 70A D2PAK-2 OptiMOS-T | MOSFET N-Ch 100V 70A D2PAK-2 OptiMOS-T |
| Manufacturer | Infineon | Infineon | Infineon |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | TO-263-3 | TO-263-3 | TO-263-3 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 100 V | 100 V | 100 V |
| Id Continuous Drain Current | 70 A | 70 A | 70 A |
| Rds On Drain Source Resistance | 12 mOhms | 9.4 mOhms | 9.4 mOhms |
| Vgs Gate Source Voltage | 20 V | 20 V | 20 V |
| Qg Gate Charge | 60 nC | 66 nC | 66 nC |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 175 C | + 175 C | + 175 C |
| Pd Power Dissipation | 125 W | 125 W | 125 W |
| Configuration | Single | Single | Single |
| Qualification | AEC-Q101 | AEC-Q101 | AEC-Q101 |
| Tradename | OptiMOS | - | OptiMOS |
| Packaging | Reel | Reel | Reel |
| Height | 4.4 mm | 4.4 mm | 4.4 mm |
| Length | 10 mm | 10 mm | 10 mm |
| Series | OptiMOS-T | XPB70N10 | OptiMOS-T |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Width | 9.25 mm | 9.25 mm | 9.25 mm |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Fall Time | 5 ns | 8 ns | 8 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 5 ns | 8 ns | 8 ns |
| Factory Pack Quantity | 1000 | 1000 | 1000 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 28 ns | 25 ns | 25 ns |
| Typical Turn On Delay Time | 10 ns | 17 ns | 17 ns |
| Part # Aliases | IPB70N10S3L12ATMA1 IPB7N1S3L12XT SP000379631 | IPB70N10S3-12 IPB7N1S312XT SP000261246 | IPB70N10S312ATMA1 IPB7N1S312XT SP000261246 |
| Unit Weight | 0.139332 oz | 0.139332 oz | 0.139332 oz |
| Vgs th Gate Source Threshold Voltage | - | 2 V | 2 V |
| Channel Mode | - | Enhancement | Enhancement |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Infineon Technologies |
IPB70N10S3L-12 | MOSFET N-Ch 100V 70A D2PAK-2 OptiMOS-T | |
| IPB70N10S312ATMA1 | MOSFET N-Ch 100V 70A D2PAK-2 OptiMOS-T | ||
| IPB70N10S3-12 | MOSFET N-Ch 100V 70A D2PAK-2 OptiMOS-T | ||
| IPB70N10SL-16 | MOSFET N-Ch 100V 70A D2PAK-2 SIPMOS | ||
| IPB70N12S3L12ATMA1 | MOSFET N-CHANNEL 100+ | ||
| IPB70N12S311ATMA1 | MOSFET N-CHANNEL 100+ | ||
| IPB70N10S3L12ATMA1 | MOSFET N-CH 100V 70A TO263-3 | ||
| IPB70N10SL16ATMA1 | MOSFET N-CH 100V 70A TO263-3 | ||
| IPB70N12S311ATMA1 | MOSFET N-CHANNEL_100+ | ||
| IPB70N12S3L12ATMA1 | MOSFET N-CHANNEL_100+ | ||
| IPB70N10S312ATMA1 | MOSFET N-CH 100V 70A TO263-3 | ||
Infineon Technologies |
IPB70N10SL16ATMA1 | MOSFET N-CHANNEL_100+ | |
| IPB70N10SL16XT | Trans MOSFET N-CH 100V 70A 3-Pin(2+Tab) TO-263 - Tape and Reel (Alt: IPB70N10SL16ATMA1) | ||
| IPB70N10L | Neu und Original | ||
| IPB70N10S2L-16 | Neu und Original | ||
| IPB70N10S3 | Neu und Original | ||
| IPB70N10S3-12 | MOSFET N-Ch 100V 70A D2PAK-2 OptiMOS-T | ||
| IPB70N10S3-12 3N1012 | Neu und Original | ||
| IPB70N10S3-12(3N1012) | Neu und Original | ||
| IPB70N10S3L-12 | MOSFET N-Ch 100V 70A D2PAK-2 OptiMOS-T | ||
| IPB70N10SL-16 | MOSFET N-Ch 100V 70A D2PAK-2 SIPMOS |