 | | | |
| PartNumber | IPB80N04S3-06 | IPB80N04S3-04 | IPB80N04S3-03 |
| Description | MOSFET N-Ch 40V 80A D2PAK-2 OptiMOS-T | MOSFET N-Ch 40V 80A D2PAK-2 OptiMOS-T | MOSFET N-Ch 40V 80A D2PAK-2 OptiMOS-T |
| Manufacturer | Infineon | Infineon | Infineon |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | TO-263-3 | TO-263-3 | TO-263-3 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 40 V | 40 V | 40 V |
| Id Continuous Drain Current | 80 A | 80 A | 80 A |
| Rds On Drain Source Resistance | 5.8 mOhms | 3.9 mOhms | 3.5 mOhms |
| Vgs Gate Source Voltage | 20 V | 20 V | 20 V |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 175 C | + 175 C | + 175 C |
| Pd Power Dissipation | 100 W | 136 W | 188 W |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Qualification | AEC-Q101 | AEC-Q101 | AEC-Q101 |
| Tradename | OptiMOS | OptiMOS | OptiMOS |
| Packaging | Reel | Reel | Reel |
| Height | 4.4 mm | 4.4 mm | 4.4 mm |
| Length | 10 mm | 10 mm | 10 mm |
| Series | OptiMOS-T | OptiMOS-T | OptiMOS-T |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Width | 9.25 mm | 9.25 mm | 9.25 mm |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Fall Time | 10 ns | 10 ns | 14 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 10 ns | 12 ns | 17 ns |
| Factory Pack Quantity | 1000 | 1000 | 1000 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 20 ns | 30 ns | 39 ns |
| Typical Turn On Delay Time | 15 ns | 20 ns | 25 ns |
| Part # Aliases | IPB80N04S306ATMA1 IPB8N4S36XT SP000254822 | IPB80N04S304ATMA1 IPB8N4S34XT SP000261217 | IPB80N04S303ATMA1 IPB8N4S33XT SP000260848 |
| Unit Weight | 0.139332 oz | 0.139332 oz | 0.139332 oz |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Infineon Technologies |
IPB80N04S3-06 | MOSFET N-Ch 40V 80A D2PAK-2 OptiMOS-T | |
| IPB80N04S3-04 | MOSFET N-Ch 40V 80A D2PAK-2 OptiMOS-T | ||
| IPB80N04S3-03 | MOSFET N-Ch 40V 80A D2PAK-2 OptiMOS-T | ||
| IPB80N04S306ATMA1 | MOSFET N-CH 40V 80A TO263-3 | ||
| IPB80N04S304ATMA1 | MOSFET N-CH 40V 80A TO263-3 | ||
| IPB80N04S303ATMA1 | MOSFET N-CH 40V 80A TO263-3 | ||
| IPB80N04S3H4ATMA1 | MOSFET N-CH 40V 80A TO263-3 | ||
Infineon Technologies |
IPB80N04S306ATMA1 | MOSFET N-CHANNEL_30/40V | |
| IPB80N04S3H4ATMA1 | MOSFET N-CHANNEL_30/40V | ||
| IPB80N04S304ATMA1 | MOSFET N-CHANNEL_30/40V | ||
| IPB80N04S303ATMA1 | MOSFET N-CHANNEL_30/40V | ||
| IPB80N04S3 | Neu und Original | ||
| IPB80N04S3-03 | MOSFET N-Ch 40V 80A D2PAK-2 OptiMOS-T | ||
| IPB80N04S3-04 | MOSFET N-Ch 40V 80A D2PAK-2 OptiMOS-T | ||
| IPB80N04S3-H4 | MOSFET N-Ch 40V 80A D2PAK-2 OptiMOS-T | ||
| IPB80N04S3-06 | IGBT Transistors MOSFET N-Ch 40V 80A D2PAK-2 OptiMOS-T |