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| PartNumber | IPG20N04S4L08AATMA1 | IPG20N04S4L08ATMA1 |
| Description | MOSFET N-CHANNEL_30/40V | MOSFET N-Ch 40V 20A TDSON-8 OptiMOS-T2 |
| Manufacturer | Infineon | Infineon |
| Product Category | MOSFET | MOSFET |
| RoHS | Y | Y |
| Technology | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT |
| Package / Case | TDSON-8 | TDSON-8 |
| Number of Channels | 1 Channel | 2 Channel |
| Transistor Polarity | N-Channel | N-Channel |
| Configuration | Single | Dual |
| Qualification | AEC-Q101 | AEC-Q101 |
| Packaging | Reel | Reel |
| Height | 1.27 mm | 1.27 mm |
| Length | 5.9 mm | 5.9 mm |
| Transistor Type | 1 N-Channel | 2 N-Channel |
| Width | 5.15 mm | 5.15 mm |
| Brand | Infineon Technologies | Infineon Technologies |
| Product Type | MOSFET | MOSFET |
| Factory Pack Quantity | 5000 | 5000 |
| Subcategory | MOSFETs | MOSFETs |
| Part # Aliases | IPG20N04S4L-08A SP001265576 | IPG20N04S4L-08 IPG2N4S4L8XT SP000705576 |
| Vds Drain Source Breakdown Voltage | - | 40 V |
| Id Continuous Drain Current | - | 20 A |
| Rds On Drain Source Resistance | - | 7.2 mOhms, 7.2 mOhms |
| Vgs th Gate Source Threshold Voltage | - | 1.2 V |
| Vgs Gate Source Voltage | - | 16 V |
| Qg Gate Charge | - | 39 nC, 39 nC |
| Minimum Operating Temperature | - | - 55 C |
| Maximum Operating Temperature | - | + 175 C |
| Pd Power Dissipation | - | 54 W |
| Channel Mode | - | Enhancement |
| Tradename | - | OptiMOS |
| Series | - | OptiMOS-T2 |
| Fall Time | - | 20 ns, 20 ns |
| Rise Time | - | 3 ns, 3 ns |
| Typical Turn Off Delay Time | - | 40 ns, 40 ns |
| Typical Turn On Delay Time | - | 7 ns, 7 ns |
| Unit Weight | - | 0.003415 oz |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Infineon Technologies |
IPG20N04S4L08AATMA1 | MOSFET N-CHANNEL_30/40V | |
| IPG20N04S4L08ATMA1 | MOSFET N-Ch 40V 20A TDSON-8 OptiMOS-T2 | ||
| IPG20N04S4L08AATMA1 | MOSFET 2N-CH 8TDSON | ||
| IPG20N04S4L08ATMA1 | MOSFET 2N-CH 8TDSON | ||
| IPG20N04S4L08 | Neu und Original |