IPI111

IPI111N15N3GAKSA1 vs IPI111N15N3 G vs IPI111N15N3G

 
PartNumberIPI111N15N3GAKSA1IPI111N15N3 GIPI111N15N3G
DescriptionMOSFET N-Ch 150V 83A I2PAK-3MOSFET N-Ch 150V 83A I2PAK-3 OptiMOS 3
ManufacturerInfineonInfineon-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleThrough HoleThrough Hole-
Package / CaseTO-262-3TO-262-3-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage150 V150 V-
Id Continuous Drain Current83 A--
Rds On Drain Source Resistance10.8 mOhms--
ConfigurationSingleSingle-
TradenameOptiMOSOptiMOS-
PackagingTubeTube-
Height9.45 mm9.45 mm-
Length10.2 mm10.2 mm-
SeriesOptiMOS 3--
Transistor Type1 N-Channel1 N-Channel-
Width4.5 mm4.5 mm-
BrandInfineon TechnologiesInfineon Technologies-
Product TypeMOSFETMOSFET-
Factory Pack Quantity500500-
SubcategoryMOSFETsMOSFETs-
Part # AliasesG IPI111N15N3 SP000680232IPI111N15N3GAKSA1 SP000680232-
Unit Weight0.073511 oz0.070548 oz-
Hersteller Teil # Beschreibung RFQ
Infineon Technologies
Infineon Technologies
IPI111N15N3GAKSA1 MOSFET N-Ch 150V 83A I2PAK-3
IPI111N15N3 G MOSFET N-Ch 150V 83A I2PAK-3 OptiMOS 3
IPI111N15N3GAKSA1 RF Bipolar Transistors MOSFET N-Ch 150V 83A I2PAK-3
IPI111N15N3 G MOSFET N-Ch 150V 83A I2PAK-3 OptiMOS 3
IPI111N15N3G Neu und Original
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