 | | |
| PartNumber | IPL60R105P7AUMA1 | IPL60R104C7AUMA1 |
| Description | MOSFET HIGH POWER_NEW | MOSFET HIGH POWER_NEW |
| Manufacturer | Infineon | Infineon |
| Product Category | MOSFET | MOSFET |
| RoHS | Y | Y |
| Technology | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT |
| Package / Case | VSON-4 | VSON-4 |
| Number of Channels | 1 Channel | - |
| Transistor Polarity | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 600 V | 600 V |
| Id Continuous Drain Current | 33 A | - |
| Rds On Drain Source Resistance | 85 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 3 V | - |
| Vgs Gate Source Voltage | 20 V | - |
| Qg Gate Charge | 45 nC | - |
| Minimum Operating Temperature | - 40 C | - |
| Maximum Operating Temperature | + 150 C | - |
| Pd Power Dissipation | 137 W | - |
| Configuration | Single | - |
| Channel Mode | Enhancement | - |
| Packaging | Reel | Reel |
| Series | CoolMOS P7 | CoolMOS C7 |
| Transistor Type | 1 N-Channel | - |
| Brand | Infineon Technologies | Infineon Technologies |
| Fall Time | 5 ns | - |
| Product Type | MOSFET | MOSFET |
| Rise Time | 8 ns | - |
| Factory Pack Quantity | 3000 | 3000 |
| Subcategory | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 83 ns | - |
| Typical Turn On Delay Time | 15 ns | - |
| Part # Aliases | IPL60R105P7 SP001657410 | IPL60R104C7 SP001298008 |
| Tradename | - | CoolMOS |
| Height | - | 1.1 mm |
| Length | - | 8 mm |
| Width | - | 8 mm |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Infineon Technologies |
IPL60R105P7AUMA1 | MOSFET HIGH POWER_NEW | |
| IPL60R104C7AUMA1 | MOSFET HIGH POWER_NEW | ||
| IPL60R104C7AUMA1 | MOSFET N-CH 600V 20A 4VSON | ||
| IPL60R105P7AUMA1 | MOSFET N-CH 4VSON | ||
| IPL60R104C7 | Neu und Original |