IPP024

IPP024N06N3GXKSA1 vs IPP024N06N3GHKSA1

 
PartNumberIPP024N06N3GXKSA1IPP024N06N3GHKSA1
DescriptionMOSFET N-Ch 60V 120A TO220-3MOSFET MV POWER MOS
ManufacturerInfineonInfineon
Product CategoryMOSFETMOSFET
RoHSY-
TechnologySiSi
Mounting StyleThrough HoleThrough Hole
Package / CaseTO-220-3TO-220-3
Number of Channels1 Channel-
Transistor PolarityN-Channel-
Vds Drain Source Breakdown Voltage60 V-
Id Continuous Drain Current120 A-
Rds On Drain Source Resistance2.1 mOhms-
ConfigurationSingle-
TradenameOptiMOS-
PackagingTubeTube
Height15.65 mm15.65 mm
Length10 mm10 mm
SeriesOptiMOS 3-
Transistor Type1 N-Channel-
Width4.4 mm4.4 mm
BrandInfineon TechnologiesInfineon Technologies
Product TypeMOSFETMOSFET
Factory Pack Quantity500-
SubcategoryMOSFETsMOSFETs
Part # AliasesG IPP024N06N3 IPP24N6N3GXK SP000680764G IPP024N06N3 IPP024N06N3GXK SP000453358
Unit Weight0.211644 oz0.211644 oz
Hersteller Teil # Beschreibung RFQ
Infineon Technologies
Infineon Technologies
IPP024N06N3GXKSA1 MOSFET N-Ch 60V 120A TO220-3
IPP024N06N3GHKSA1 Neu und Original
IPP024N06N3GXKSA1 MOSFET N-CH 60V 120A TO220-3
Infineon Technologies
Infineon Technologies
IPP024N06N3GHKSA1 MOSFET MV POWER MOS
IPP024N06N3GXK Trans MOSFET N-CH 60V 120A 3-Pin(3+Tab) TO-220 - Rail/Tube (Alt: IPP024N06N3GXKSA1)
IPP024N06N3 Neu und Original
IPP024N06N3G Power Field-Effect Transistor, 120A I(D), 60V, 0.0024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
IPP024N06N3G 024N06N Neu und Original
IPP024N06N3G(024N06N) Neu und Original
IPP024N06N3G,024N06 Neu und Original
IPP024N06N3GS Neu und Original
IPP024N06N3 G MOSFET N-Ch 60V 120A TO220-3 OptiMOS 3
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