 |  | | |
| PartNumber | IPP051N15N5AKSA1 | IPP0515N04NG | IPP051N15N5 |
| Description | MOSFET | ||
| Manufacturer | Infineon | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | Through Hole | - | - |
| Package / Case | PG-TO-220-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 150 V | - | - |
| Id Continuous Drain Current | 120 A | - | - |
| Rds On Drain Source Resistance | 5.1 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 3 V | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 80 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 175 C | - | - |
| Pd Power Dissipation | 300 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Tradename | OptiMOS | - | - |
| Packaging | Tube | - | - |
| Height | 15.65 mm | - | - |
| Length | 10 mm | - | - |
| Series | OptiMOS 5 | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Width | 4.4 mm | - | - |
| Brand | Infineon Technologies | - | - |
| Forward Transconductance Min | 59 S | - | - |
| Fall Time | 37 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 5.3 ns | - | - |
| Factory Pack Quantity | 500 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 4.5 ns | - | - |
| Typical Turn On Delay Time | 19.6 ns | - | - |
| Part # Aliases | IPP051N15N5 SP001279600 | - | - |
| Unit Weight | 0.063493 oz | - | - |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Infineon Technologies |
IPP051N15N5AKSA1 | MOSFET | |
| IPP051N15N5AKSA1 | MV POWER MOS | ||
| IPP0515N04NG | Neu und Original | ||
| IPP051N15N5 | Neu und Original |