PartNumber | IPP093N06N3 G | IPP093N06N3GHKSA1 | IPP093N06N3GXKSA1 |
Description | MOSFET N-Ch 60V 50A TO220-3 OptiMOS 3 | MOSFET | MOSFET MV POWER MOS |
Manufacturer | Infineon | Infineon | Infineon |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | - | - |
Technology | Si | Si | Si |
Mounting Style | Through Hole | Through Hole | Through Hole |
Package / Case | TO-220-3 | TO-220-3 | TO-220-3 |
Number of Channels | 1 Channel | - | - |
Transistor Polarity | N-Channel | - | - |
Vds Drain Source Breakdown Voltage | 60 V | - | - |
Id Continuous Drain Current | 50 A | - | - |
Rds On Drain Source Resistance | 9 mOhms | - | - |
Vgs th Gate Source Threshold Voltage | 4 V | - | - |
Vgs Gate Source Voltage | 20 V | - | - |
Qg Gate Charge | 36 nC | - | - |
Minimum Operating Temperature | - 55 C | - | - |
Maximum Operating Temperature | + 175 C | - | - |
Pd Power Dissipation | 71 W | - | - |
Configuration | Single | - | - |
Channel Mode | Enhancement | - | - |
Tradename | OptiMOS | - | - |
Packaging | Tube | - | Tube |
Height | 15.65 mm | 15.65 mm | 15.65 mm |
Length | 10 mm | 10 mm | 10 mm |
Series | OptiMOS 3 | - | - |
Transistor Type | 1 N-Channel | - | - |
Type | OptiMOS 3 Power-Transistor | - | - |
Width | 4.4 mm | 4.4 mm | 4.4 mm |
Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies |
Forward Transconductance Min | 55 S, 28 S | - | - |
Fall Time | 5 ns | - | - |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 40 ns | - | - |
Factory Pack Quantity | 500 | - | - |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 20 ns | - | - |
Typical Turn On Delay Time | 15 ns | - | - |
Part # Aliases | IPP093N06N3GXKSA1 IPP93N6N3GXK SP000680852 | - | G IPP093N06N3 IPP93N6N3GXK SP000680852 |
Unit Weight | 0.211644 oz | - | 0.211644 oz |