 | | | |
| PartNumber | IPP180N10N3 G | IPP17N25S3-100 | IPP17N25S3100AKSA1 |
| Description | MOSFET N-Ch 100V 43A TO220-3 OptiMOS 3 | MOSFET N-Ch 250V 17A TO220-3 | MOSFET N-Ch 250V 17A TO220-3 |
| Manufacturer | Infineon | Infineon | Infineon |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | Through Hole | Through Hole | Through Hole |
| Package / Case | TO-220-3 | TO-220-3 | TO-220-3 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 100 V | 250 V | 250 V |
| Id Continuous Drain Current | 43 A | 17 A | 17 A |
| Rds On Drain Source Resistance | 15.5 mOhms | 85 mOhms | 85 mOhms |
| Vgs th Gate Source Threshold Voltage | 2 V | 2 V | 2 V |
| Vgs Gate Source Voltage | 20 V | 20 V | 20 V |
| Qg Gate Charge | 25 nC | 19 nC | 19 nC |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 175 C | + 175 C | + 175 C |
| Pd Power Dissipation | 71 W | 107 W | 107 W |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Tradename | OptiMOS | - | - |
| Packaging | Tube | Tube | Tube |
| Height | 15.65 mm | 15.65 mm | 15.65 mm |
| Length | 10 mm | 10 mm | 10 mm |
| Series | OptiMOS 3 | XPP17N25 | IPP17N25 |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Width | 4.4 mm | 4.4 mm | 4.4 mm |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Forward Transconductance Min | 20 S | - | - |
| Fall Time | 5 ns | 1.2 ns | 1.2 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 12 ns | 3.7 ns | 3.7 ns |
| Factory Pack Quantity | 500 | 500 | 500 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 19 ns | 7.5 ns | 7.5 ns |
| Typical Turn On Delay Time | 12 ns | 4.4 ns | 4.4 ns |
| Part # Aliases | IPP180N10N3GXKSA1 IPP18N1N3GXK SP000683090 | IPP17N25S3100AKSA1 SP001025116 | IPP17N25S3-100 SP001025116 |
| Unit Weight | 0.211644 oz | 0.211644 oz | 0.211644 oz |
| Qualification | - | AEC-Q101 | AEC-Q101 |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Infineon Technologies |
IPP180N10N3 G | MOSFET N-Ch 100V 43A TO220-3 OptiMOS 3 | |
| IPP17N25S3-100 | MOSFET N-Ch 250V 17A TO220-3 | ||
| IPP17N25S3100AKSA1 | MOSFET N-Ch 250V 17A TO220-3 | ||
| IPP180N10N3GXKSA1 | MOSFET N-Ch 100V 43A TO220-3 OptiMOS 3 | ||
| IPP180N10N3GXKSA1 | MOSFET N-CH 100V 43A TO220-3 | ||
| IPP17N25S3100AKSA1 | MOSFET N-CH 250V 17A TO-220 | ||
| IPP180N10N3G | Neu und Original | ||
| IPP17N25S3-100 | MOSFET N-Ch 250V 17A TO220-3 | ||
| IPP16CNE8N,16CNE8N | Neu und Original | ||
| IPP16CNE8NG | Neu und Original | ||
| IPP180N10N3 | Neu und Original | ||
| IPP180N10N3 G(SP00068309 | Neu und Original | ||
| IPP180N10N3GXKSA1 , 2SD9 | Neu und Original | ||
| IPP180N10N3 G | Darlington Transistors MOSFET N-Ch 100V 43A TO220-3 OptiMOS 3 |