 |  | | |
| PartNumber | IPP25N06S3L-22 | IPP25N06S325XK | IPP260N06N3GXKSA1 |
| Description | MOSFET N-Ch 55V 25A TO220-3 | MOSFET N-CH 55V 25A TO-220 | MOSFET N-CH 60V 27A TO220-3 |
| Manufacturer | Infineon | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | Through Hole | - | - |
| Package / Case | TO-220-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 55 V | - | - |
| Id Continuous Drain Current | 25 A | - | - |
| Rds On Drain Source Resistance | 21.6 mOhms | - | - |
| Vgs Gate Source Voltage | 16 V | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 175 C | - | - |
| Pd Power Dissipation | 50 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Tube | - | - |
| Height | 15.65 mm | - | - |
| Length | 10 mm | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Width | 4.4 mm | - | - |
| Brand | Infineon Technologies | - | - |
| Fall Time | 43 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 26 ns | - | - |
| Factory Pack Quantity | 500 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 30 ns | - | - |
| Typical Turn On Delay Time | 9 ns | - | - |
| Part # Aliases | IPP25N06S3L22XK | - | - |
| Unit Weight | 0.211644 oz | - | - |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Infineon Technologies |
IPP25N06S3L-22 | MOSFET N-Ch 55V 25A TO220-3 | |
Infineon Technologies |
IPP26CNE8N G | MOSFET N-CH 85V 35A TO-220 | |
| IPP25N06S325XK | MOSFET N-CH 55V 25A TO-220 | ||
| IPP25N06S3L-22 | MOSFET N-CH 55V 25A TO-220 | ||
| IPP260N06N3GXKSA1 | MOSFET N-CH 60V 27A TO220-3 | ||
| IPP26CN10NGHKSA1 | MOSFET N-CH 100V 35A TO-220 | ||
| IPP25N06S325 | Neu und Original | ||
| IPP260N06N3 G | Trans MOSFET N-CH 60V 27A 3-Pin(3+Tab) TO-220 - Bulk (Alt: IPP260N06N3G) | ||
| IPP260N06N3 G,IPP260N06N | Neu und Original | ||
| IPP260N06N3G | Power Field-Effect Transistor, 27A I(D), 60V, 0.026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | ||
| IPP260N06N3GS | Neu und Original | ||
| IPP260N06N3GXK | Neu und Original | ||
| IPP26CN10N | Neu und Original | ||
| IPP26CN10N G | MOSFET N-Ch 100V 35A TO220-3 | ||
| IPP26CN10NG | Neu und Original | ||
| IPP26CN10NG,26CN10N | Neu und Original | ||
| IPP26CN10NGXK | Neu und Original | ||
| IPP26CNE8N | Neu und Original | ||
| IPP26CNE8NG | Neu und Original | ||
| IPP2772 | Neu und Original | ||
| IPP2N0807 | Neu und Original |