PartNumber | IPP80N06S207AKSA4 | IPP80N06S207AKSA1 | IPP80N06S205AKSA1 |
Description | MOSFET N-CHANNEL_55/60V | MOSFET N-Ch 55V 80A TO220-3 OptiMOS | MOSFET N-CH 55V 80A TO220-3 |
Manufacturer | Infineon | Infineon | - |
Product Category | MOSFET | MOSFET | - |
Technology | Si | Si | - |
Mounting Style | Through Hole | Through Hole | - |
Package / Case | TO-220-3 | TO-220-3 | - |
Number of Channels | 1 Channel | 1 Channel | - |
Transistor Polarity | N-Channel | N-Channel | - |
Configuration | Single | Single | - |
Qualification | AEC-Q101 | - | - |
Packaging | Tube | Tube | - |
Height | 15.65 mm | 15.65 mm | - |
Length | 10 mm | 10 mm | - |
Transistor Type | 1 N-Channel | 1 N-Channel | - |
Width | 4.4 mm | 4.4 mm | - |
Brand | Infineon Technologies | Infineon Technologies | - |
Product Type | MOSFET | MOSFET | - |
Factory Pack Quantity | 500 | 500 | - |
Subcategory | MOSFETs | MOSFETs | - |
Part # Aliases | IPP80N06S2-07 SP001067876 | IPP80N06S2-07 IPP80N06S207XK SP000218810 | - |
Unit Weight | 0.211644 oz | 0.063493 oz | - |
RoHS | - | Y | - |
Vds Drain Source Breakdown Voltage | - | 55 V | - |
Id Continuous Drain Current | - | 80 A | - |
Rds On Drain Source Resistance | - | 5.6 mOhms | - |
Vgs th Gate Source Threshold Voltage | - | 2.1 V | - |
Vgs Gate Source Voltage | - | 20 V | - |
Qg Gate Charge | - | 110 nC | - |
Minimum Operating Temperature | - | - 55 C | - |
Maximum Operating Temperature | - | + 175 C | - |
Pd Power Dissipation | - | 250 W | - |
Channel Mode | - | Enhancement | - |
Series | - | XPP80N06 | - |
Fall Time | - | 36 ns | - |
Rise Time | - | 37 ns | - |
Typical Turn Off Delay Time | - | 61 ns | - |
Typical Turn On Delay Time | - | 16 ns | - |