 | | |
| PartNumber | IPS110N12N3GBKMA1 | IPS118N10N G |
| Description | MOSFET N-Ch 120V 75A IPAK-3 | MOSFET N-KANAL POWER MOS |
| Manufacturer | Infineon | Infineon |
| Product Category | MOSFET | MOSFET |
| RoHS | Y | - |
| Technology | Si | Si |
| Mounting Style | Through Hole | Through Hole |
| Package / Case | TO-251-3 | TO-251-3 |
| Number of Channels | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 120 V | 100 V |
| Id Continuous Drain Current | 75 A | 75 A |
| Rds On Drain Source Resistance | 11 mOhms | 11.8 mOhms |
| Configuration | Single | Single |
| Tradename | OptiMOS | - |
| Packaging | Tube | Tube |
| Height | 6.22 mm | 6.22 mm |
| Length | 6.73 mm | 6.73 mm |
| Series | OptiMOS 3 | IPS118N10 |
| Transistor Type | 1 N-Channel | 1 N-Channel |
| Width | 2.38 mm | 2.38 mm |
| Brand | Infineon Technologies | Infineon Technologies |
| Product Type | MOSFET | MOSFET |
| Factory Pack Quantity | 1500 | 1500 |
| Subcategory | MOSFETs | MOSFETs |
| Part # Aliases | G IPS110N12N3 SP000674456 | SP000680974 |
| Unit Weight | 0.012102 oz | 0.139332 oz |
| Vgs Gate Source Voltage | - | 20 V |
| Minimum Operating Temperature | - | - 55 C |
| Maximum Operating Temperature | - | + 175 C |
| Pd Power Dissipation | - | 125 W |
| Channel Mode | - | Enhancement |
| Fall Time | - | 8 ns |
| Rise Time | - | 21 ns |
| Typical Turn Off Delay Time | - | 32 ns |
| Typical Turn On Delay Time | - | 17 ns |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Infineon Technologies |
IPS110N12N3GBKMA1 | MOSFET N-Ch 120V 75A IPAK-3 | |
| IPS118N10N G | MOSFET N-KANAL POWER MOS | ||
Infineon Technologies |
IPS118N10N G | MOSFET N-CH 100V 75A TO251-3 | |
| IPS110N12N3GBKMA1 | MOSFET N-CH 120V 75A TO251-3 | ||
| IPS110N12N3 | Neu und Original | ||
| IPS110N12N3 G | MOSFET N-Ch 120V 75A IPAK-3 OptiMOS 3 | ||
| IPS1160BD/01 | Neu und Original | ||
| IPS116D | Neu und Original | ||
| IPS118N10NG | Neu und Original | ||
| IPS11N60C3 | Neu und Original |