 | | ||
| PartNumber | IPT60R028G7XTMA1 | IPT60R028G7XTMA1 60R028G7 | IPT60R028G7 |
| Description | MOSFET HIGH POWER NEW | ||
| Manufacturer | Infineon | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | HSOF-8 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 600 V | - | - |
| Id Continuous Drain Current | 75 A | - | - |
| Rds On Drain Source Resistance | 28 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 3 V | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 123 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 391 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Reel | - | - |
| Series | CoolMOS G7 | - | - |
| Brand | Infineon Technologies | - | - |
| Fall Time | 2.8 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 9 ns | - | - |
| Factory Pack Quantity | 2000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 100 ns | - | - |
| Typical Turn On Delay Time | 28 ns | - | - |
| Part # Aliases | IPT60R028G7 SP001579312 | - | - |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Infineon Technologies |
IPT60R028G7XTMA1 | MOSFET HIGH POWER NEW | |
| IPT60R028G7XTMA1 | MOSFET N-CH 600V 75A HSOF-8 | ||
| IPT60R028G7XTMA1 60R028G7 | Neu und Original | ||
| IPT60R028G7 | Neu und Original |