PartNumber | IPU135N08N3 | IPU135N08N3G | IPU135N08N3 G |
Description | IGBT Transistors MOSFET N-Ch 80V 50A IPAK-3 | ||
Manufacturer | Infineon Technologies | - | Infineon Technologies |
Product Category | Transistors - FETs, MOSFETs - Single | - | Transistors - FETs, MOSFETs - Single |
Series | IPU135N08 | - | IPU135N08 |
Packaging | Tube | - | Tube |
Part Aliases | IPU135N08N3GBKMA1 SP000521642 | - | IPU135N08N3GBKMA1 SP000521642 |
Unit Weight | 0.139332 oz | - | 0.139332 oz |
Mounting Style | Through Hole | - | Through Hole |
Tradename | OptiMOS | - | OptiMOS |
Package Case | IPAK-3 | - | IPAK-3 |
Technology | Si | - | Si |
Number of Channels | 1 Channel | - | 1 Channel |
Configuration | Single | - | Single |
Transistor Type | 1 N-Channel | - | 1 N-Channel |
Pd Power Dissipation | 79 W | - | 79 W |
Maximum Operating Temperature | + 175 C | - | + 175 C |
Minimum Operating Temperature | - 55 C | - | - 55 C |
Fall Time | 5 ns | - | 5 ns |
Rise Time | 35 ns | - | 35 ns |
Vgs Gate Source Voltage | 20 V | - | 20 V |
Id Continuous Drain Current | 50 A | - | 50 A |
Vds Drain Source Breakdown Voltage | 80 V | - | 80 V |
Rds On Drain Source Resistance | 13.5 mOhms | - | 13.5 mOhms |
Transistor Polarity | N-Channel | - | N-Channel |
Typical Turn Off Delay Time | 18 ns | - | 18 ns |
Typical Turn On Delay Time | 12 ns | - | 12 ns |
Channel Mode | Enhancement | - | Enhancement |