 |  | | |
| PartNumber | IPW50R190CEFKSA1 | IPW50R190CE | IPW50R199CP |
| Description | MOSFET N-Ch 500V 63A TO247-3 | Transistor MOSFET N-CH 550V 24.8A 3-Pin TO-247 Tube - Bulk (Alt: IPW50R190CE) | Darlington Transistors MOSFET N-Ch 500V 17A TO247-3 CoolMOS CP |
| Manufacturer | Infineon | Infineon Technologies | INFINEON |
| Product Category | MOSFET | Transistors - FETs, MOSFETs - Single | IC Chips |
| RoHS | Y | - | - |
| Technology | Si | Si | Si |
| Mounting Style | Through Hole | Through Hole | Through Hole |
| Package / Case | TO-247-3 | - | - |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 500 V | - | - |
| Id Continuous Drain Current | 24.8 A | - | - |
| Rds On Drain Source Resistance | 170 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 2.5 V | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 47.2 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - 55 C |
| Maximum Operating Temperature | + 150 C | - | + 150 C |
| Pd Power Dissipation | 152 W | - | - |
| Configuration | Single | - | Single |
| Channel Mode | Enhancement | - | Enhancement |
| Tradename | CoolMOS | - | CoolMOS |
| Packaging | Tube | Tube | Tube |
| Height | 21.1 mm | - | - |
| Length | 16.13 mm | - | - |
| Series | CoolMOS CE | XPW50R190 | CoolMOS CP |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Width | 5.21 mm | - | - |
| Brand | Infineon Technologies | - | - |
| Fall Time | 7.5 ns | - | 10 ns |
| Product Type | MOSFET | - | - |
| Rise Time | 8.5 ns | - | 14 ns |
| Factory Pack Quantity | 240 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 54 ns | - | 80 ns |
| Typical Turn On Delay Time | 9.5 ns | - | 35 ns |
| Part # Aliases | IPW50R190CEFKSA1 SP000850798 | - | - |
| Unit Weight | 1.340411 oz | 1.340411 oz | 1.340411 oz |
| Part Aliases | - | IPW50R190CEFKSA1 SP000850798 | IPW50R199CPFKSA1 IPW50R199CPXK SP000236096 |
| Package Case | - | TO-247-3 | TO-247-3 |
| Vds Drain Source Breakdown Voltage | - | 500 V | 500 V |
| Pd Power Dissipation | - | - | 139 W |
| Vgs Gate Source Voltage | - | - | 20 V |
| Id Continuous Drain Current | - | - | 17 A |
| Rds On Drain Source Resistance | - | - | 199 mOhms |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Infineon Technologies |
IPW50R190CEFKSA1 | MOSFET N-Ch 500V 63A TO247-3 | |
Infineon Technologies |
IPW50R199CPFKSA1 | MOSFET N-CH 550V 17A TO-247 | |
| IPW50R190CEFKSA1 | Darlington Transistors MOSFET N-Ch 550V 63A TO247-3 | ||
| IPW50R190CE | Transistor MOSFET N-CH 550V 24.8A 3-Pin TO-247 Tube - Bulk (Alt: IPW50R190CE) | ||
| IPW50R199CP | Darlington Transistors MOSFET N-Ch 500V 17A TO247-3 CoolMOS CP | ||
| IPW50R190CE,5R190C, | Neu und Original | ||
| IPW50R190CE,5R190E | Neu und Original | ||
| IPW50R190CE,IPW65R080CFD | Neu und Original | ||
| IPW50R190CEFKSA1 , 2SJ23 | Neu und Original | ||
| IPW50R199CP,5R199P | Neu und Original |