PartNumber | IPW60R099P7XKSA1 | IPW60R099P6XKSA1 | IPW60R099P6 |
Description | MOSFET HIGH POWER_NEW | MOSFET HIGH POWER PRICE/PERFORM | MOSFET HIGH POWER PRICE/PERFORM |
Manufacturer | Infineon | Infineon | Infineon |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | - | Y |
Technology | Si | Si | Si |
Mounting Style | Through Hole | Through Hole | Through Hole |
Package / Case | TO-247-3 | TO-247-3 | PG-TO-247-3 |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 600 V | 600 V | 600 V |
Id Continuous Drain Current | 31 A | 37.9 A | 37.9 A |
Rds On Drain Source Resistance | 77 mOhms | 89 mOhms | 99 mOhms |
Vgs th Gate Source Threshold Voltage | 3 V | 3.5 V | 3.5 V |
Vgs Gate Source Voltage | 20 V | 20 V | 10 V |
Qg Gate Charge | 45 nC | 70 nC | 70 nC |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
Pd Power Dissipation | 117 W | 278 W | 278 W |
Configuration | Single | Single | Single |
Channel Mode | Enhancement | Enhancement | Enhancement |
Tradename | CoolMOS | CoolMOS | CoolMOS |
Packaging | Tube | Tube | Tube |
Series | CoolMOS P7 | CoolMOS P6 | CoolMOS P6 |
Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies |
Fall Time | 5 ns | 5 ns | 5 ns |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 15 ns | 10 ns | 10 ns |
Factory Pack Quantity | 240 | 240 | 240 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 89 ns | 50 ns | 50 ns |
Typical Turn On Delay Time | 23 ns | 20 ns | 20 ns |
Part # Aliases | IPW60R099P7 SP001647038 | IPW60R099P6 SP001114658 | IPW60R099P6XKSA1 SP001114658 |
Unit Weight | 0.211644 oz | 1.340411 oz | 1.340411 oz |
Height | - | 21.1 mm | 21.1 mm |
Length | - | 16.13 mm | 16.13 mm |
Width | - | 5.21 mm | 5.21 mm |