PartNumber | IPW60R120C7XKSA1 | IPW60R125C6FKSA1 | IPW60R120P7XKSA1 |
Description | MOSFET HIGH POWER_NEW | MOSFET N-Ch 600V 30A TO247-3 CoolMOS C6 | MOSFET HIGH POWER_NEW |
Manufacturer | Infineon | Infineon | Infineon |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Mounting Style | Through Hole | Through Hole | Through Hole |
Package / Case | TO-247-3 | TO-247-3 | TO-247-3 |
Vds Drain Source Breakdown Voltage | 600 V | 600 V | 600 V |
Tradename | CoolMOS | CoolMOS | CoolMOS |
Packaging | Tube | Tube | Tube |
Height | 21.1 mm | 21.1 mm | - |
Length | 16.13 mm | 16.13 mm | - |
Series | CoolMOS C7 | CoolMOS C6 | CoolMOS P7 |
Width | 5.21 mm | 5.21 mm | - |
Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies |
Product Type | MOSFET | MOSFET | MOSFET |
Factory Pack Quantity | 240 | 240 | 240 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Part # Aliases | IPW60R120C7 SP001385060 | IPW60R125C6 IPW6R125C6XK SP000641912 | IPW60R120P7 SP001658382 |
Unit Weight | 0.211644 oz | 1.340411 oz | 0.211644 oz |
Number of Channels | - | 1 Channel | 1 Channel |
Transistor Polarity | - | N-Channel | N-Channel |
Id Continuous Drain Current | - | 30 A | 26 A |
Rds On Drain Source Resistance | - | 110 mOhms | 100 mOhms |
Vgs th Gate Source Threshold Voltage | - | 2.5 V | 3 V |
Vgs Gate Source Voltage | - | 20 V | 20 V |
Qg Gate Charge | - | 96 nC | 36 nC |
Minimum Operating Temperature | - | - 55 C | - 55 C |
Maximum Operating Temperature | - | + 150 C | + 150 C |
Pd Power Dissipation | - | 219 W | 95 W |
Configuration | - | Single | Single |
Channel Mode | - | Enhancement | Enhancement |
Transistor Type | - | 1 N-Channel | 1 N-Channel |
Fall Time | - | 7 ns | 6 ns |
Rise Time | - | 12 ns | 14 ns |
Typical Turn Off Delay Time | - | 83 ns | 81 ns |
Typical Turn On Delay Time | - | 15 ns | 21 ns |