 |  | | |
| PartNumber | IPW65R190C6FKSA1 | IPW65R190C6/SL21N65CT | IPW65R190C6 |
| Description | MOSFET HIGH POWER_LEGACY | Darlington Transistors MOSFET N-Ch 700V 20.2A TO247-3 CoolMOS C6 | |
| Manufacturer | Infineon | - | Infineon Technologies |
| Product Category | MOSFET | - | Transistors - FETs, MOSFETs - Single |
| Technology | Si | - | Si |
| Mounting Style | Through Hole | - | Through Hole |
| Package / Case | TO-247-3 | - | - |
| Tradename | CoolMOS | - | CoolMOS |
| Packaging | Tube | - | Tube |
| Height | 21.1 mm | - | - |
| Length | 16.13 mm | - | - |
| Width | 5.21 mm | - | - |
| Brand | Infineon Technologies | - | - |
| Product Type | MOSFET | - | - |
| Subcategory | MOSFETs | - | - |
| Part # Aliases | IPW65R190C6FKSA1 SP000863902 | - | - |
| Unit Weight | 1.340411 oz | - | 1.340411 oz |
| Series | - | - | CoolMOS C6 |
| Part Aliases | - | - | IPW65R190C6FKSA1 IPW65R190C6XK SP000863902 |
| Package Case | - | - | TO-247-3 |
| Number of Channels | - | - | 1 Channel |
| Configuration | - | - | Single |
| Transistor Type | - | - | 1 N-Channel |
| Pd Power Dissipation | - | - | 151 W |
| Maximum Operating Temperature | - | - | + 150 C |
| Minimum Operating Temperature | - | - | - 55 C |
| Fall Time | - | - | 10 ns |
| Rise Time | - | - | 12 ns |
| Vgs Gate Source Voltage | - | - | 20 V |
| Id Continuous Drain Current | - | - | 20.2 A |
| Vds Drain Source Breakdown Voltage | - | - | 700 V |
| Rds On Drain Source Resistance | - | - | 190 mOhms |
| Transistor Polarity | - | - | N-Channel |
| Typical Turn Off Delay Time | - | - | 133 nS |
| Qg Gate Charge | - | - | 73 nC |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Infineon Technologies |
IPW65R190C6FKSA1 | MOSFET HIGH POWER_LEGACY | |
| IPW65R190C6/SL21N65CT | Neu und Original | ||
Infineon Technologies |
IPW65R190C6FKSA1 | MOSFET N-CH 650V 20.2A TO247 | |
| IPW65R190C6 | Darlington Transistors MOSFET N-Ch 700V 20.2A TO247-3 CoolMOS C6 |