 |  | | |
| PartNumber | IPW65R660CFDFKSA1 | IPW65R660CFD 65F660 | IPW65R660CFD |
| Description | MOSFET N-CH 700V 6A TO247 | Darlington Transistors MOSFET N-Ch 650V 6A TO247-3 CoolMOS CFD2 | |
| Manufacturer | - | - | Infineon Technologies |
| Product Category | - | - | Transistors - FETs, MOSFETs - Single |
| Series | - | - | CoolMOS CFD2 |
| Packaging | - | - | Tube |
| Part Aliases | - | - | IPW65R660CFDFKSA1 IPW65R660CFDXK SP000861700 |
| Unit Weight | - | - | 1.340411 oz |
| Mounting Style | - | - | Through Hole |
| Tradename | - | - | CoolMOS |
| Package Case | - | - | TO-247-3 |
| Technology | - | - | Si |
| Number of Channels | - | - | 1 Channel |
| Configuration | - | - | Single |
| Transistor Type | - | - | 1 N-Channel |
| Pd Power Dissipation | - | - | 63 W |
| Fall Time | - | - | 10 ns |
| Rise Time | - | - | 8 ns |
| Vgs Gate Source Voltage | - | - | 30 V |
| Id Continuous Drain Current | - | - | 6 A |
| Vds Drain Source Breakdown Voltage | - | - | 650 V |
| Vgs th Gate Source Threshold Voltage | - | - | 4 V |
| Rds On Drain Source Resistance | - | - | 660 mOhms |
| Transistor Polarity | - | - | N-Channel |
| Qg Gate Charge | - | - | 22 nC |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Infineon Technologies |
IPW65R660CFDFKSA1 | MOSFET N-CH 700V 6A TO247 | |
| IPW65R660CFD 65F660 | Neu und Original | ||
| IPW65R660CFD | Darlington Transistors MOSFET N-Ch 650V 6A TO247-3 CoolMOS CFD2 |