PartNumber | IRF1010ESTRLPBF | IRF1010ES | IRF1010ESPBF |
Description | MOSFET MOSFT 60V 83A 12mOhm 86.6nC | POWER FIELD-EFFECT TRANSISTOR, 75A I(D), 60V, 0.012OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET | MOSFET, 60V, 83A, 12 MOHM, 86.6 NC QG, D2-PAK |
Manufacturer | Infineon | - | - |
Product Category | MOSFET | - | - |
RoHS | Y | - | - |
Technology | Si | - | - |
Mounting Style | SMD/SMT | - | - |
Package / Case | TO-252-3 | - | - |
Number of Channels | 1 Channel | - | - |
Transistor Polarity | N-Channel | - | - |
Vds Drain Source Breakdown Voltage | 60 V | - | - |
Id Continuous Drain Current | 84 A | - | - |
Rds On Drain Source Resistance | 12 mOhms | - | - |
Vgs th Gate Source Threshold Voltage | 4 V | - | - |
Vgs Gate Source Voltage | 20 V | - | - |
Qg Gate Charge | 130 nC | - | - |
Minimum Operating Temperature | - 55 C | - | - |
Maximum Operating Temperature | + 175 C | - | - |
Pd Power Dissipation | 200 W | - | - |
Configuration | Single | - | - |
Packaging | Reel | - | - |
Height | 2.3 mm | - | - |
Length | 6.5 mm | - | - |
Transistor Type | 1 N-Channel | - | - |
Width | 6.22 mm | - | - |
Brand | Infineon / IR | - | - |
Forward Transconductance Min | 69 S | - | - |
Fall Time | 53 ns | - | - |
Product Type | MOSFET | - | - |
Rise Time | 78 ns | - | - |
Factory Pack Quantity | 800 | - | - |
Subcategory | MOSFETs | - | - |
Typical Turn Off Delay Time | 48 ns | - | - |
Typical Turn On Delay Time | 12 ns | - | - |
Part # Aliases | SP001553824 | - | - |
Unit Weight | 0.139332 oz | - | - |