PartNumber | IRF1405STRLPBF | IRF1405S | IRF1405SPBF |
Description | MOSFET MOSFT 55V 131A 5.3mOhm 170nC | MOSFET N-CH 55V 131A D2PAK | Darlington Transistors MOSFET 55V 1 N-CH HEXFET 5.3mOhms 170nC |
Manufacturer | Infineon | IR | IOR |
Product Category | MOSFET | FETs - Single | FETs - Single |
RoHS | Y | - | - |
Technology | Si | - | Si |
Mounting Style | SMD/SMT | - | SMD/SMT |
Package / Case | TO-252-3 | - | - |
Number of Channels | 1 Channel | - | 1 Channel |
Transistor Polarity | N-Channel | - | N-Channel |
Vds Drain Source Breakdown Voltage | 55 V | - | - |
Id Continuous Drain Current | 131 A | - | - |
Rds On Drain Source Resistance | 5.3 mOhms | - | - |
Vgs th Gate Source Threshold Voltage | 4 V | - | - |
Vgs Gate Source Voltage | 20 V | - | - |
Qg Gate Charge | 170 nC | - | - |
Minimum Operating Temperature | - 55 C | - | - 55 C |
Maximum Operating Temperature | + 175 C | - | + 175 C |
Pd Power Dissipation | 200 W | - | - |
Configuration | Single | - | Single |
Packaging | Reel | - | Tube |
Height | 2.3 mm | - | - |
Length | 6.5 mm | - | - |
Transistor Type | 1 N-Channel | - | 1 N-Channel |
Width | 6.22 mm | - | - |
Brand | Infineon / IR | - | - |
Forward Transconductance Min | 69 S | - | - |
Fall Time | 110 ns | - | 110 ns |
Product Type | MOSFET | - | - |
Rise Time | 190 ns | - | 190 ns |
Factory Pack Quantity | 800 | - | - |
Subcategory | MOSFETs | - | - |
Typical Turn Off Delay Time | 130 ns | - | 130 ns |
Typical Turn On Delay Time | 13 ns | - | 13 ns |
Part # Aliases | SP001571200 | - | - |
Unit Weight | 0.139332 oz | - | 0.139332 oz |
Package Case | - | - | TO-252-3 |
Pd Power Dissipation | - | - | 200 W |
Vgs Gate Source Voltage | - | - | 20 V |
Id Continuous Drain Current | - | - | 131 A |
Vds Drain Source Breakdown Voltage | - | - | 55 V |
Rds On Drain Source Resistance | - | - | 5.3 mOhms |
Qg Gate Charge | - | - | 170 nC |
Channel Mode | - | - | Enhancement |