PartNumber | IRF2807STRLPBF | IRF2807STRRPBF | IRF2807STRL |
Description | MOSFET MOSFT 75V 82A 13mOhm 106.7nC | MOSFET 75V 1 N-CH HEXFET 13mOhms 106.7nC | MOSFET N-CH 75V 82A D2PAK |
Manufacturer | Infineon | Infineon | IR |
Product Category | MOSFET | MOSFET | FETs - Single |
RoHS | Y | Y | - |
Technology | Si | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | TO-252-3 | TO-252-3 | - |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 75 V | 75 V | - |
Id Continuous Drain Current | 82 A | 82 A | - |
Rds On Drain Source Resistance | 13 mOhms | 13 mOhms | - |
Vgs Gate Source Voltage | 20 V | 20 V | - |
Qg Gate Charge | 106.7 nC | 160 nC | - |
Pd Power Dissipation | 200 W | 230 W | - |
Configuration | Single | Single | - |
Packaging | Reel | Reel | Reel |
Height | 2.3 mm | 2.3 mm | - |
Length | 6.5 mm | 6.5 mm | - |
Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
Width | 6.22 mm | 6.22 mm | - |
Brand | Infineon Technologies | Infineon / IR | - |
Product Type | MOSFET | MOSFET | - |
Factory Pack Quantity | 800 | 800 | - |
Subcategory | MOSFETs | MOSFETs | - |
Part # Aliases | SP001564210 | SP001564670 | - |
Unit Weight | 0.139332 oz | 0.139332 oz | 0.139332 oz |
Vgs th Gate Source Threshold Voltage | - | 4 V | - |
Minimum Operating Temperature | - | - 55 C | - |
Maximum Operating Temperature | - | + 175 C | - |
Channel Mode | - | Enhancement | - |
Type | - | HEXFET Power MOSFET | - |
Forward Transconductance Min | - | 38 S | - |
Fall Time | - | 48 ns | - |
Rise Time | - | 64 ns | - |
Typical Turn Off Delay Time | - | 49 ns | - |
Typical Turn On Delay Time | - | 13 ns | - |
Package Case | - | - | TO-252-3 |
Pd Power Dissipation | - | - | 200 W |
Vgs Gate Source Voltage | - | - | 20 V |
Id Continuous Drain Current | - | - | 82 A |
Vds Drain Source Breakdown Voltage | - | - | 75 V |
Rds On Drain Source Resistance | - | - | 13 mOhms |
Qg Gate Charge | - | - | 106.7 nC |