IRF3710STRL

IRF3710STRLPBF vs IRF3710STRLPBF AOB298L vs IRF3710STRLPBF,IRF3710ZS

 
PartNumberIRF3710STRLPBFIRF3710STRLPBF AOB298LIRF3710STRLPBF,IRF3710ZS
DescriptionMOSFET MOSFT 100V 57A 23mOhm 86.7nC
ManufacturerInfineonIR-
Product CategoryMOSFETIC Chips-
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseTO-252-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage100 V--
Id Continuous Drain Current57 A--
Rds On Drain Source Resistance23 mOhms--
Vgs th Gate Source Threshold Voltage4 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge130 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 175 C--
Pd Power Dissipation200 W--
ConfigurationSingle--
PackagingReel--
Height2.3 mm--
Length6.5 mm--
Transistor Type1 N-Channel--
Width6.22 mm--
BrandInfineon Technologies--
Forward Transconductance Min32 S--
Fall Time47 ns--
Product TypeMOSFET--
Rise Time58 ns--
Factory Pack Quantity800--
SubcategoryMOSFETs--
Typical Turn Off Delay Time45 ns--
Typical Turn On Delay Time12 ns--
Part # AliasesSP001553984--
Unit Weight0.139332 oz--
Hersteller Teil # Beschreibung RFQ
Infineon Technologies
Infineon Technologies
IRF3710STRLPBF MOSFET MOSFT 100V 57A 23mOhm 86.7nC
IRF3710STRLPBF MOSFET N-CH 100V 57A D2PAK
IRF3710STRLPBF AOB298L Neu und Original
IRF3710STRLPBF-CUT TAPE Neu und Original
IRF3710STRLPBF,IRF3710ZS Neu und Original
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