 |  | | |
| PartNumber | IRF510PBF | IRF510PBF,IRF510,F510 | IRF510PBF,IRF520NPBF, |
| Description | MOSFET N-CH 100V HEXFET MOSFET D2-PA | ||
| Manufacturer | Vishay | - | - |
| Product Category | MOSFET | - | - |
| RoHS | E | - | - |
| Technology | Si | - | - |
| Mounting Style | Through Hole | - | - |
| Package / Case | TO-220AB-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 100 V | - | - |
| Id Continuous Drain Current | 5.6 A | - | - |
| Rds On Drain Source Resistance | 540 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 2 V | - | - |
| Vgs Gate Source Voltage | 10 V | - | - |
| Qg Gate Charge | 8.3 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 175 C | - | - |
| Pd Power Dissipation | 43 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Tube | - | - |
| Series | IRF | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Brand | Vishay / Siliconix | - | - |
| Forward Transconductance Min | 1.3 S | - | - |
| Fall Time | 9.4 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 16 ns | - | - |
| Factory Pack Quantity | 50 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 15 ns | - | - |
| Typical Turn On Delay Time | 6.9 ns | - | - |
| Unit Weight | 0.211644 oz | - | - |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Vishay / Siliconix |
IRF510PBF | MOSFET N-CH 100V HEXFET MOSFET D2-PA | |
Vishay |
IRF510PBF | MOSFET N-CH 100V 5.6A TO-220AB | |
| IRF510PBF,IRF510,F510 | Neu und Original | ||
| IRF510PBF,IRF520NPBF, | Neu und Original |