| PartNumber | IRF540NSTRLPBF | IRF540NSTRRPBF |
| Description | MOSFET MOSFT 100V 33A 44mOhm 47.3nC | MOSFET 100V 1 N-CH HEXFET 44mOhms 47.3nC |
| Manufacturer | Infineon | Infineon |
| Product Category | MOSFET | MOSFET |
| RoHS | Y | Y |
| Technology | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT |
| Package / Case | TO-263-3 | TO-263-3 |
| Number of Channels | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 100 V | 100 V |
| Id Continuous Drain Current | 33 A | 33 A |
| Rds On Drain Source Resistance | 44 mOhms | 44 mOhms |
| Vgs Gate Source Voltage | 20 V | 20 V |
| Qg Gate Charge | 47.3 nC | 47.3 nC |
| Pd Power Dissipation | 3.8 W | 3.8 W |
| Configuration | Single | Single |
| Packaging | Reel | Reel |
| Height | 4.4 mm | 4.4 mm |
| Length | 10 mm | 10 mm |
| Transistor Type | 1 N-Channel | 1 N-Channel |
| Width | 9.25 mm | 9.25 mm |
| Brand | Infineon Technologies | Infineon Technologies |
| Product Type | MOSFET | MOSFET |
| Factory Pack Quantity | 800 | 800 |
| Subcategory | MOSFETs | MOSFETs |
| Part # Aliases | SP001563324 | SP001571284 |
| Unit Weight | 0.139332 oz | 0.139332 oz |
| Vgs th Gate Source Threshold Voltage | - | 4 V |
| Minimum Operating Temperature | - | - 55 C |
| Maximum Operating Temperature | - | + 175 C |
| Channel Mode | - | Enhancement |
| Type | - | HEXFET Power MOSFET |
| Forward Transconductance Min | - | 21 S |
| Fall Time | - | 35 ns |
| Rise Time | - | 35 ns |
| Typical Turn Off Delay Time | - | 39 ns |
| Typical Turn On Delay Time | - | 11 ns |