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| PartNumber | IRF6201TRPBF | IRF6201PBF |
| Description | MOSFET MOSFT 20V 27A 2.5mOhm 2.5V cpbl | MOSFET 20V 1 N-CH HEXFET 2.45mOhms 130nC |
| Manufacturer | Infineon | Infineon |
| Product Category | MOSFET | MOSFET |
| RoHS | Y | Y |
| Technology | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT |
| Package / Case | SO-8 | SO-8 |
| Number of Channels | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 20 V | 20 V |
| Id Continuous Drain Current | 27 A | 27 A |
| Rds On Drain Source Resistance | 2.45 mOhms | 2.45 mOhms |
| Vgs Gate Source Voltage | 12 V | 12 V |
| Qg Gate Charge | 130 nC | 130 nC |
| Pd Power Dissipation | 2.5 W | 2.5 W |
| Configuration | Single | Single |
| Packaging | Reel | Tube |
| Height | 1.75 mm | 1.75 mm |
| Length | 4.9 mm | 4.9 mm |
| Transistor Type | 1 N-Channel | 1 N-Channel |
| Width | 3.9 mm | 3.9 mm |
| Brand | Infineon Technologies | Infineon / IR |
| Product Type | MOSFET | MOSFET |
| Factory Pack Quantity | 4000 | 95 |
| Subcategory | MOSFETs | MOSFETs |
| Part # Aliases | SP001563314 | SP001570096 |
| Unit Weight | 0.019048 oz | 0.019048 oz |
| Vgs th Gate Source Threshold Voltage | - | 1.1 V |
| Minimum Operating Temperature | - | - 55 C |
| Maximum Operating Temperature | - | + 150 C |
| Channel Mode | - | Enhancement |
| Type | - | HEXFET Power MOSFET |
| Fall Time | - | 265 ns |
| Rise Time | - | 100 ns |
| Typical Turn Off Delay Time | - | 320 ns |
| Typical Turn On Delay Time | - | 29 ns |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Infineon Technologies |
IRF6201TRPBF | MOSFET MOSFT 20V 27A 2.5mOhm 2.5V cpbl | |
| IRF6201PBF | MOSFET N-CH 20V 27A 8-SO | ||
| IRF6201TRPBF | MOSFET N-CH 20V 27A 8-SOIC | ||
Infineon / IR |
IRF6201PBF | MOSFET 20V 1 N-CH HEXFET 2.45mOhms 130nC | |
| IRF6201TRPBF. | Neu und Original | ||
| IRF6201TRPBF-CUT TAPE | Neu und Original | ||
| IRF6201 | Neu und Original |