IRF6218

IRF6218PBF vs IRF6218 vs IRF6218L

 
PartNumberIRF6218PBFIRF6218IRF6218L
DescriptionMOSFET 1 P-CH -150V HEXFET 150mOhms 21nC
ManufacturerInfineonIR/VISHAYIR
Product CategoryMOSFETFETs - SingleIC Chips
RoHSY--
TechnologySi--
Mounting StyleThrough Hole--
Package / CaseTO-220-3--
Number of Channels1 Channel--
Transistor PolarityP-Channel--
Vds Drain Source Breakdown Voltage150 V--
Id Continuous Drain Current27 A--
Rds On Drain Source Resistance150 mOhms--
Vgs Gate Source Voltage20 V--
Qg Gate Charge21 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 175 C--
Pd Power Dissipation250 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingTube--
Height15.65 mm--
Length10 mm--
Transistor Type1 P-Channel--
TypeSmps MOSFET--
Width4.4 mm--
BrandInfineon / IR--
Fall Time30 ns--
Product TypeMOSFET--
Rise Time70 ns--
Factory Pack Quantity1000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time35 ns--
Typical Turn On Delay Time21 ns--
Part # AliasesSP001564812--
Unit Weight0.211644 oz--
Hersteller Teil # Beschreibung RFQ
Infineon / IR
Infineon / IR
IRF6218PBF MOSFET 1 P-CH -150V HEXFET 150mOhms 21nC
IRF6218STRLPBF MOSFET MOSFT PCh -150V -27A 150mOhm 21nC
IRF6218STRLPBF-CUT TAPE Neu und Original
IRF6218 Neu und Original
IRF6218L Neu und Original
IRF6218PBF. P CHANNEL MOSFET, -150V, 27A, TO-220AB, Transistor Polarity:P Channel, Continuous Drain Current Id:-27A, Drain Source Voltage Vds:-150V, On Resistance Rds(on):0.15ohm, Rds(on) Test Voltage Vgs:-1
IRF6218S Neu und Original
IRF6218STR Neu und Original
IRF6218STRLPBFTR-ND Neu und Original
IRF6218STRLPPBF MULT1G Neu und Original
Infineon Technologies
Infineon Technologies
IRF6218SPBF MOSFET P-CH 150V 27A D2-PAK
IRF6218PBF MOSFET P-CH 150V 27A TO-220AB
IRF6218STRLPBF MOSFET P-CH 150V 27A D2PAK
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