PartNumber | IRF640STRLPBF | IRF640SPBF | IRF640STRL |
Description | MOSFET N-CH 200V HEXFET MOSFET D2-PA | MOSFET N-Chan 200V 18 Amp | MOSFET RECOMMENDED ALT 844-IRF640STRLPBF |
Manufacturer | Vishay | Vishay | Vishay |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | E | E | N |
Technology | Si | Si | Si |
Packaging | Reel | Tube | Reel |
Series | IRF | IRF | IRF |
Brand | Vishay / Siliconix | Vishay / Siliconix | Vishay / Siliconix |
Product Type | MOSFET | MOSFET | MOSFET |
Factory Pack Quantity | 800 | 1000 | 800 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Unit Weight | 0.050717 oz | 0.050717 oz | 0.050717 oz |
Mounting Style | - | SMD/SMT | SMD/SMT |
Package / Case | - | TO-263-3 | TO-263-3 |
Number of Channels | - | 1 Channel | - |
Transistor Polarity | - | N-Channel | - |
Vds Drain Source Breakdown Voltage | - | 200 V | - |
Id Continuous Drain Current | - | 18 A | - |
Rds On Drain Source Resistance | - | 180 mOhms | - |
Vgs th Gate Source Threshold Voltage | - | 2 V | - |
Vgs Gate Source Voltage | - | 10 V | - |
Qg Gate Charge | - | 70 nC | - |
Minimum Operating Temperature | - | - 55 C | - |
Maximum Operating Temperature | - | + 150 C | - |
Pd Power Dissipation | - | 130 W | - |
Configuration | - | Single | - |
Channel Mode | - | Enhancement | - |
Transistor Type | - | 1 N-Channel | - |
Forward Transconductance Min | - | 6.7 S | - |
Fall Time | - | 36 ns | - |
Rise Time | - | 51 ns | - |
Typical Turn Off Delay Time | - | 45 ns | - |
Typical Turn On Delay Time | - | 14 ns | - |
Height | - | - | 4.83 mm |
Length | - | - | 10.67 mm |
Width | - | - | 9.65 mm |