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| PartNumber | IRF7103QTRPBF | IRF7103Q | IRF7103QPBF |
| Description | MOSFET AUTO HEXFET SO-8 | MOSFET 2N-CH 50V 3A 8-SOIC | MOSFET, Power, Dual N-Ch, VDSS 50V, RDS(ON) 200 Milliohms, ID 1.5A, SO-8, PD 2.4W |
| Manufacturer | Infineon | Infineon Technologies | IR |
| Product Category | MOSFET | FETs - Arrays | IC Chips |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | SO-8 | - | - |
| Number of Channels | 2 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 50 V | - | - |
| Id Continuous Drain Current | 3 A | - | - |
| Rds On Drain Source Resistance | 200 mOhms | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 10 nC | - | - |
| Pd Power Dissipation | 2.4 W | - | - |
| Configuration | Dual | - | - |
| Height | 1.75 mm | - | - |
| Length | 4.9 mm | - | - |
| Transistor Type | 2 N-Channel | - | - |
| Width | 3.9 mm | - | - |
| Brand | Infineon / IR | - | - |
| Product Type | MOSFET | - | - |
| Subcategory | MOSFETs | - | - |
| Unit Weight | 0.019048 oz | - | - |
| Series | - | HEXFETR | - |
| Packaging | - | Tube | - |
| Package Case | - | 8-SOIC (0.154", 3.90mm Width) | - |
| Operating Temperature | - | -55°C ~ 175°C (TJ) | - |
| Mounting Type | - | Surface Mount | - |
| Supplier Device Package | - | 8-SO | - |
| FET Type | - | 2 N-Channel (Dual) | - |
| Power Max | - | 2.4W | - |
| Drain to Source Voltage Vdss | - | 50V | - |
| Input Capacitance Ciss Vds | - | 255pF @ 25V | - |
| FET Feature | - | Standard | - |
| Current Continuous Drain Id 25°C | - | 3A | - |
| Rds On Max Id Vgs | - | 130 mOhm @ 3A, 10V | - |
| Vgs th Max Id | - | 3V @ 250μA | - |
| Gate Charge Qg Vgs | - | 15nC @ 10V | - |