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| PartNumber | IRF7316TRPBF | IRF7316TR | IRF7316TRPB |
| Description | MOSFET MOSFT DUAL PCh -30V 4.9A | MOSFET 2P-CH 30V 4.9A 8-SOIC | |
| Manufacturer | Infineon | Infineon Technologies | Infineon Technologies |
| Product Category | MOSFET | FETs - Arrays | FETs - Arrays |
| RoHS | Y | - | - |
| Technology | Si | - | Si |
| Mounting Style | SMD/SMT | - | SMD/SMT |
| Package / Case | SO-8 | - | - |
| Number of Channels | 2 Channel | - | 2 Channel |
| Transistor Polarity | P-Channel | - | P-Channel |
| Vds Drain Source Breakdown Voltage | 30 V | - | - |
| Id Continuous Drain Current | 4.9 A | - | - |
| Rds On Drain Source Resistance | 76 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 1 V | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 23 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - 55 C |
| Maximum Operating Temperature | + 150 C | - | + 150 C |
| Pd Power Dissipation | 2 W | - | - |
| Configuration | Dual | - | Dual |
| Channel Mode | Enhancement | - | Enhancement |
| Packaging | Reel | Tape & Reel (TR) | Digi-ReelR Alternate Packaging |
| Height | 1.75 mm | - | - |
| Length | 4.9 mm | - | - |
| Transistor Type | 2 P-Channel | - | 2 P-Channel |
| Width | 3.9 mm | - | - |
| Brand | Infineon / IR | - | - |
| Forward Transconductance Min | 7.7 S | - | - |
| Fall Time | 32 ns | - | 32 ns |
| Product Type | MOSFET | - | - |
| Rise Time | 13 ns | - | 13 ns |
| Factory Pack Quantity | 4000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 34 ns | - | 34 ns |
| Typical Turn On Delay Time | 13 ns | - | 13 ns |
| Part # Aliases | SP001565294 | - | - |
| Unit Weight | 0.017870 oz | - | 0.017870 oz |
| Series | - | HEXFETR | HEXFETR |
| Package Case | - | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC (0.154", 3.90mm Width) |
| Operating Temperature | - | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Mounting Type | - | Surface Mount | Surface Mount |
| Supplier Device Package | - | 8-SO | 8-SO |
| FET Type | - | 2 P-Channel (Dual) | 2 P-Channel (Dual) |
| Power Max | - | 2W | 2W |
| Drain to Source Voltage Vdss | - | 30V | 30V |
| Input Capacitance Ciss Vds | - | 710pF @ 25V | 710pF @ 25V |
| FET Feature | - | Logic Level Gate | Logic Level Gate |
| Current Continuous Drain Id 25°C | - | 4.9A | 4.9A |
| Rds On Max Id Vgs | - | 58 mOhm @ 4.9A, 10V | 58 mOhm @ 4.9A, 10V |
| Vgs th Max Id | - | 1V @ 250μA | 1V @ 250μA |
| Gate Charge Qg Vgs | - | 34nC @ 10V | 34nC @ 10V |
| Pd Power Dissipation | - | - | 2 W |
| Vgs Gate Source Voltage | - | - | 20 V |
| Id Continuous Drain Current | - | - | - 4.9 A |
| Vds Drain Source Breakdown Voltage | - | - | - 30 V |
| Vgs th Gate Source Threshold Voltage | - | - | - 1 V |
| Rds On Drain Source Resistance | - | - | 76 mOhms |
| Qg Gate Charge | - | - | 23 nC |
| Forward Transconductance Min | - | - | 7.7 S |