IRF7316TR

IRF7316TRPBF vs IRF7316TR vs IRF7316TRPBF , 2SJ610

 
PartNumberIRF7316TRPBFIRF7316TRIRF7316TRPBF , 2SJ610
DescriptionMOSFET MOSFT DUAL PCh -30V 4.9AMOSFET 2P-CH 30V 4.9A 8-SOIC
ManufacturerInfineonInfineon Technologies-
Product CategoryMOSFETFETs - Arrays-
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseSO-8--
Number of Channels2 Channel--
Transistor PolarityP-Channel--
Vds Drain Source Breakdown Voltage30 V--
Id Continuous Drain Current4.9 A--
Rds On Drain Source Resistance76 mOhms--
Vgs th Gate Source Threshold Voltage1 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge23 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation2 W--
ConfigurationDual--
Channel ModeEnhancement--
PackagingReelTape & Reel (TR)-
Height1.75 mm--
Length4.9 mm--
Transistor Type2 P-Channel--
Width3.9 mm--
BrandInfineon / IR--
Forward Transconductance Min7.7 S--
Fall Time32 ns--
Product TypeMOSFET--
Rise Time13 ns--
Factory Pack Quantity4000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time34 ns--
Typical Turn On Delay Time13 ns--
Part # AliasesSP001565294--
Unit Weight0.017870 oz--
Series-HEXFETR-
Package Case-8-SOIC (0.154", 3.90mm Width)-
Operating Temperature--55°C ~ 150°C (TJ)-
Mounting Type-Surface Mount-
Supplier Device Package-8-SO-
FET Type-2 P-Channel (Dual)-
Power Max-2W-
Drain to Source Voltage Vdss-30V-
Input Capacitance Ciss Vds-710pF @ 25V-
FET Feature-Logic Level Gate-
Current Continuous Drain Id 25°C-4.9A-
Rds On Max Id Vgs-58 mOhm @ 4.9A, 10V-
Vgs th Max Id-1V @ 250μA-
Gate Charge Qg Vgs-34nC @ 10V-
Hersteller Teil # Beschreibung RFQ
Infineon / IR
Infineon / IR
IRF7316TRPBF MOSFET MOSFT DUAL PCh -30V 4.9A
Infineon Technologies
Infineon Technologies
IRF7316TRPBF MOSFET 2P-CH 30V 4.9A 8-SOIC
IRF7316TR MOSFET 2P-CH 30V 4.9A 8-SOIC
IRF7316TRPBF-CUT TAPE Neu und Original
IRF7316TRPBF , 2SJ610 Neu und Original
IRF7316TRPBF,IRF7316TR,IRF7316PBF, Neu und Original
IRF7316TRPB Neu und Original
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