| PartNumber | IRF7319TRPBF | IRF7319PBF |
| Description | MOSFET MOSFT DUAL N/PCh 30V 6.5A | MOSFET 20V DUAL N-CH HEXFET 58mOhms 22nC |
| Manufacturer | Infineon | Infineon |
| Product Category | MOSFET | MOSFET |
| RoHS | Y | Y |
| Technology | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT |
| Package / Case | SO-8 | SO-8 |
| Number of Channels | 2 Channel | 2 Channel |
| Transistor Polarity | N-Channel, P-Channel | N-Channel, P-Channel |
| Vds Drain Source Breakdown Voltage | 30 V | 30 V |
| Id Continuous Drain Current | 6.5 A | 6.5 A |
| Rds On Drain Source Resistance | 46 mOhms | 58 mOhms |
| Vgs Gate Source Voltage | 20 V | 20 V |
| Qg Gate Charge | 22 nC | 22 nC |
| Pd Power Dissipation | 2 W | 2 W |
| Configuration | Dual | Dual |
| Packaging | Reel | Tube |
| Height | 1.75 mm | 1.75 mm |
| Length | 4.9 mm | 4.9 mm |
| Transistor Type | 1 N-Channel, 1 P-Channel | 1 N-Channel, 1 P-Channel |
| Width | 3.9 mm | 3.9 mm |
| Brand | Infineon / IR | Infineon / IR |
| Product Type | MOSFET | MOSFET |
| Factory Pack Quantity | 4000 | 3800 |
| Subcategory | MOSFETs | MOSFETs |
| Part # Aliases | SP001563414 | SP001555176 |
| Unit Weight | 0.019048 oz | 0.019048 oz |
| Vgs th Gate Source Threshold Voltage | - | 1 V |
| Minimum Operating Temperature | - | - 55 C |
| Maximum Operating Temperature | - | + 150 C |
| Channel Mode | - | Enhancement |
| Type | - | Power MOSFET |
| Fall Time | - | 17 ns, 32 ns |
| Rise Time | - | 8.9 ns, 13 ns |
| Typical Turn Off Delay Time | - | 26 ns, 34 ns |
| Typical Turn On Delay Time | - | 8.1 ns, 13 ns |