 | |  | |
| PartNumber | IRF7321D2TR | IRF7321D2 | IRF7321D2PBF |
| Description | MOSFET P-CH 30V 4.7A 8-SOIC | MOSFET P-CH 30V 4.7A 8-SOIC | -30V FETKY - MOSFET AND SCHOTTKY DIODE IN A SO-8 PACKAGE |
| Manufacturer | - | IR | International Rectifier |
| Product Category | - | FETs - Single | Transistors - FETs, MOSFETs - Single |
| Packaging | - | - | Tube |
| Unit Weight | - | - | 0.019048 oz |
| Mounting Style | - | - | SMD/SMT |
| Package Case | - | - | SOIC-8 |
| Technology | - | - | Si |
| Number of Channels | - | - | 1 Channel |
| Configuration | - | - | Single Dual Drain |
| Transistor Type | - | - | 1 P-Channel |
| Pd Power Dissipation | - | - | 2 W |
| Maximum Operating Temperature | - | - | + 150 C |
| Minimum Operating Temperature | - | - | - 55 C |
| Fall Time | - | - | 32 ns |
| Rise Time | - | - | 13 ns |
| Vgs Gate Source Voltage | - | - | 20 V |
| Id Continuous Drain Current | - | - | - 4.9 A |
| Vds Drain Source Breakdown Voltage | - | - | - 30 V |
| Rds On Drain Source Resistance | - | - | 98 mOhms |
| Transistor Polarity | - | - | P-Channel |
| Typical Turn Off Delay Time | - | - | 34 ns |
| Typical Turn On Delay Time | - | - | 13 ns |
| Qg Gate Charge | - | - | 23 nC |
| Channel Mode | - | - | Enhancement |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Infineon / IR |
IRF7321D2TRPBF | MOSFET MOSFT PCh w/Schttky -4.9A 62mOhm 23nC | |
| IRF7321D2TRPBF. | Neu und Original | ||
| IRF7321D2PBF | -30V FETKY - MOSFET AND SCHOTTKY DIODE IN A SO-8 PACKAGE | ||
Infineon Technologies |
IRF7321D2TR | MOSFET P-CH 30V 4.7A 8-SOIC | |
| IRF7321D2 | MOSFET P-CH 30V 4.7A 8-SOIC | ||
| IRF7321D2TRPBF | MOSFET P-CH 30V 4.7A 8-SOIC |