 |  | | |
| PartNumber | IRF7324D1PBF | IRF7324D1 | IRF7324D1TR |
| Description | MOSFET 20V FETKY 12 VGS 270 RDS 2.7VmOhm | MOSFET P-CH 20V 2.2A 8-SOIC | MOSFET P-CH 20V 2.2A 8-SOIC |
| Manufacturer | Infineon | IR | IOR |
| Product Category | MOSFET | FETs - Single | IC Chips |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | SO-8 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | P-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 20 V | - | - |
| Id Continuous Drain Current | 2.2 A | - | - |
| Rds On Drain Source Resistance | 270 mOhms | - | - |
| Vgs Gate Source Voltage | 12 V | - | - |
| Qg Gate Charge | 5.2 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 2 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Tube | - | - |
| Height | 1.75 mm | - | - |
| Length | 4.9 mm | - | - |
| Transistor Type | 1 P-Channel | - | - |
| Type | FETKY MOSFET & Schottky Diode | - | - |
| Width | 3.9 mm | - | - |
| Brand | Infineon / IR | - | - |
| Fall Time | 7.6 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 12 ns | - | - |
| Factory Pack Quantity | 95 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 11 ns | - | - |
| Typical Turn On Delay Time | 10 ns | - | - |
| Unit Weight | 0.019048 oz | - | - |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Infineon / IR |
IRF7324D1PBF | MOSFET 20V FETKY 12 VGS 270 RDS 2.7VmOhm | |
Infineon Technologies |
IRF7324D1PBF | MOSFET P-CH 20V 2.2A 8-SOIC | |
| IRF7324D1 | MOSFET P-CH 20V 2.2A 8-SOIC | ||
| IRF7324D1TR | MOSFET P-CH 20V 2.2A 8-SOIC | ||
| IRF7324D1TRPBF | IGBT Transistors MOSFET MOSFT PCh w/Schttky -2.2A 270mOhm 5.2nC | ||
| IRF7324DT | Neu und Original |