IRF7507

IRF7507TRPBF vs IRF7507PBF vs IRF7507TR

 
PartNumberIRF7507TRPBFIRF7507PBFIRF7507TR
DescriptionMOSFET MOSFT DUAL N/PCh 20V 2.4A Micro 8MOSFET MICRO-8MOSFET N/P-CH 20V MICRO8
ManufacturerInfineonInfineonInfineon Technologies
Product CategoryMOSFETMOSFETFETs - Arrays
RoHSY--
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseMicro-8Micro-8-
Number of Channels2 Channel2 Channel-
Transistor PolarityN-Channel, P-ChannelN-Channel, P-Channel-
Vds Drain Source Breakdown Voltage20 V20 V-
Id Continuous Drain Current2.4 A, 1.7 A2.4 A-
Rds On Drain Source Resistance135 mOhms, 270 mOhms140 mOhms-
Vgs Gate Source Voltage12 V12 V-
Qg Gate Charge5.3 nC5.3 nC-
Pd Power Dissipation1.25 W1.25 W-
ConfigurationDualDual-
PackagingReel-Digi-ReelR
Height1.11 mm1.11 mm-
Length3 mm3 mm-
Transistor Type1 N-Channel, 1 P-Channel1 N-Channel, 1 P-Channel-
Width3 mm3 mm-
BrandInfineon TechnologiesInfineon / IR-
Product TypeMOSFETMOSFET-
Factory Pack Quantity4000--
SubcategoryMOSFETsMOSFETs-
Part # AliasesSP001555486--
Series--HEXFETR
Package Case--8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Operating Temperature---55°C ~ 150°C (TJ)
Mounting Type--Surface Mount
Supplier Device Package--Micro8
FET Type--N and P-Channel
Power Max--1.25W
Drain to Source Voltage Vdss--20V
Input Capacitance Ciss Vds--260pF @ 15V
FET Feature--Logic Level Gate
Current Continuous Drain Id 25°C--2.4A, 1.7A
Rds On Max Id Vgs--140 mOhm @ 1.7A, 4.5V
Vgs th Max Id--700mV @ 250μA
Gate Charge Qg Vgs--8nC @ 4.5V
Hersteller Teil # Beschreibung RFQ
Infineon Technologies
Infineon Technologies
IRF7507TRPBF MOSFET MOSFT DUAL N/PCh 20V 2.4A Micro 8
IRF7507PBF MOSFET N/P-CH DUAL 20V MICRO-8
IRF7507TR MOSFET N/P-CH 20V MICRO8
IRF7507TRPBF Neu und Original
Infineon / IR
Infineon / IR
IRF7507PBF MOSFET MICRO-8
IRF7507TRPBF-CUT TAPE Neu und Original
IRF7507 MOSFET Transistor, Pair, Complementary, SO
IRF7507TRPBF,F7507,IRF75 Neu und Original
IRF7507TRPBF. Neu und Original
IRF7507TRPBF/7507 Neu und Original
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