PartNumber | IRF840PBF | IRF840PB | IRF840PBF , MM3Z9V1B |
Description | MOSFET N-CH 500V HEXFET MOSFET | ||
Manufacturer | Vishay | VISHAY | - |
Product Category | MOSFET | FETs - Single | - |
RoHS | E | - | - |
Technology | Si | - | - |
Mounting Style | Through Hole | - | - |
Package / Case | TO-220AB-3 | - | - |
Number of Channels | 1 Channel | - | - |
Transistor Polarity | N-Channel | - | - |
Vds Drain Source Breakdown Voltage | 500 V | - | - |
Id Continuous Drain Current | 8 A | - | - |
Rds On Drain Source Resistance | 850 mOhms | - | - |
Vgs th Gate Source Threshold Voltage | 2 V | - | - |
Vgs Gate Source Voltage | 10 V | - | - |
Qg Gate Charge | 63 nC | - | - |
Minimum Operating Temperature | - 55 C | - | - |
Maximum Operating Temperature | + 150 C | - | - |
Pd Power Dissipation | 125 W | - | - |
Configuration | Single | - | - |
Channel Mode | Enhancement | - | - |
Packaging | Tube | - | - |
Series | IRF | - | - |
Transistor Type | 1 N-Channel | - | - |
Brand | Vishay / Siliconix | - | - |
Forward Transconductance Min | 4.9 S | - | - |
Fall Time | 20 ns | - | - |
Product Type | MOSFET | - | - |
Rise Time | 23 ns | - | - |
Factory Pack Quantity | 50 | - | - |
Subcategory | MOSFETs | - | - |
Typical Turn Off Delay Time | 49 ns | - | - |
Typical Turn On Delay Time | 14 ns | - | - |
Part # Aliases | SIHF840-E3 | - | - |
Unit Weight | 0.211644 oz | - | - |