 |  | | |
| PartNumber | IRF8915TRPBF | IRF8915TR | IRF8915 |
| Description | MOSFET MOSFT DUAL NCh 20V 8.9A | MOSFET 2N-CH 20V 8.9A 8-SOIC | MOSFET 2N-CH 20V 8.9A 8-SOIC |
| Manufacturer | Infineon | - | Infineon Technologies |
| Product Category | MOSFET | - | FETs - Arrays |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | SO-8 | - | - |
| Number of Channels | 2 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 20 V | - | - |
| Id Continuous Drain Current | 8.9 A | - | - |
| Rds On Drain Source Resistance | 21.6 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 2.5 V | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 4.9 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 2 W | - | - |
| Configuration | Dual | - | - |
| Packaging | Reel | - | Tube |
| Height | 1.75 mm | - | - |
| Length | 4.9 mm | - | - |
| Transistor Type | 2 N-Channel | - | - |
| Width | 3.9 mm | - | - |
| Brand | Infineon Technologies | - | - |
| Forward Transconductance Min | 12 S | - | - |
| Fall Time | 3.6 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 12 ns | - | - |
| Factory Pack Quantity | 4000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 7.1 ns | - | - |
| Typical Turn On Delay Time | 6 ns | - | - |
| Part # Aliases | SP001554494 | - | - |
| Unit Weight | 0.017870 oz | - | - |
| Series | - | - | HEXFETR |
| Package Case | - | - | 8-SOIC (0.154", 3.90mm Width) |
| Operating Temperature | - | - | -55°C ~ 150°C (TJ) |
| Mounting Type | - | - | Surface Mount |
| Supplier Device Package | - | - | 8-SO |
| FET Type | - | - | 2 N-Channel (Dual) |
| Power Max | - | - | 2W |
| Drain to Source Voltage Vdss | - | - | 20V |
| Input Capacitance Ciss Vds | - | - | 540pF @ 10V |
| FET Feature | - | - | Logic Level Gate |
| Current Continuous Drain Id 25°C | - | - | 8.9A |
| Rds On Max Id Vgs | - | - | 18.3 mOhm @ 8.9A, 10V |
| Vgs th Max Id | - | - | 2.5V @ 250μA |
| Gate Charge Qg Vgs | - | - | 7.4nC @ 4.5V |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Infineon Technologies |
IRF8915TRPBF | MOSFET MOSFT DUAL NCh 20V 8.9A | |
| IRF8915TR | MOSFET 2N-CH 20V 8.9A 8-SOIC | ||
| IRF8915 | MOSFET 2N-CH 20V 8.9A 8-SOIC | ||
| IRF8915TRPBF | MOSFET 2N-CH 20V 8.9A 8-SOIC | ||
| IRF8915TRPBF-CUT TAPE | Neu und Original | ||
| IRF8915UTRPBF | Neu und Original | ||
| IRF8915PBFCT-ND | Neu und Original | ||
| IRF8915PBF | IGBT Transistors MOSFET 20V DUAL N-CH HEXFET 18.3mOhms 4.9nC |