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| PartNumber | IRFBE30LPBF | IRFBE30PBF | IRFBE30S |
| Description | MOSFET N-Chan 800V 4.1 Amp | MOSFET N-CH 800V HEXFET MOSFET | MOSFET RECOMMENDED ALT 844-IRFBE30SPBF |
| Manufacturer | Vishay | Vishay | Vishay |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | E | E | N |
| Technology | Si | Si | Si |
| Mounting Style | Through Hole | Through Hole | - |
| Package / Case | TO-262-3 | TO-220AB-3 | - |
| Packaging | Tube | Tube | Tube |
| Height | 9.65 mm | 15.49 mm | - |
| Length | 10.67 mm | 10.41 mm | - |
| Series | IRFBE | IRFBE | IRFBE |
| Width | 4.83 mm | 4.7 mm | - |
| Brand | Vishay / Siliconix | Vishay / Siliconix | Vishay / Siliconix |
| Product Type | MOSFET | MOSFET | MOSFET |
| Factory Pack Quantity | 1000 | 50 | 50 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Unit Weight | 0.084199 oz | 0.211644 oz | 0.050717 oz |
| Number of Channels | - | 1 Channel | - |
| Transistor Polarity | - | N-Channel | - |
| Vds Drain Source Breakdown Voltage | - | 800 V | - |
| Id Continuous Drain Current | - | 4.1 A | - |
| Rds On Drain Source Resistance | - | 3 Ohms | - |
| Vgs th Gate Source Threshold Voltage | - | 2 V | - |
| Vgs Gate Source Voltage | - | 10 V | - |
| Qg Gate Charge | - | 78 nC | - |
| Minimum Operating Temperature | - | - 55 C | - |
| Maximum Operating Temperature | - | + 150 C | - |
| Pd Power Dissipation | - | 125 W | - |
| Configuration | - | Single | - |
| Channel Mode | - | Enhancement | - |
| Transistor Type | - | 1 N-Channel | - |
| Forward Transconductance Min | - | 2.5 S | - |
| Fall Time | - | 30 ns | - |
| Rise Time | - | 33 ns | - |
| Typical Turn Off Delay Time | - | 82 ns | - |
| Typical Turn On Delay Time | - | 12 ns | - |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Vishay / Siliconix |
IRFBE30LPBF | MOSFET N-Chan 800V 4.1 Amp | |
| IRFBE30PBF | MOSFET N-CH 800V HEXFET MOSFET | ||
| IRFBE30SPBF | MOSFET N-Chan 800V 4.1 Amp | ||
| IRFBE30STRLPBF | MOSFET 800V 4.1A 125W | ||
| IRFBE30S | MOSFET RECOMMENDED ALT 844-IRFBE30SPBF | ||
Vishay |
IRFBE30STRL | MOSFET N-CH 800V 4.1A D2PAK | |
| IRFBE30STRR | MOSFET N-CH 800V 4.1A D2PAK | ||
| IRFBE30 | MOSFET N-CH 800V 4.1A TO-220AB | ||
| IRFBE30L | MOSFET N-CH 800V 4.1A TO-262 | ||
| IRFBE30LPBF | MOSFET N-CH 800V 4.1A TO-262 | ||
| IRFBE30PBF | MOSFET N-CH 800V 4.1A TO-220AB | ||
| IRFBE30S | MOSFET N-CH 800V 4.1A D2PAK | ||
| IRFBE30STRLPBF | MOSFET N-CH 800V 4.1A D2PAK | ||
| IRFBE30SPBF | Darlington Transistors MOSFET N-Chan 800V 4.1 Amp | ||
| IRFBE30S FBE30S | Neu und Original | ||
| IRFBE30 IRFBE30PBF 4.1 | Neu und Original | ||
| IRFBE30PBF,FBE30,IRFBE30 | Neu und Original | ||
| IRFBE30PBF-CN | Neu und Original |