PartNumber | IRFD9110PBF | IRFD9110 | IRFD9113 |
Description | MOSFET P-CH -100V HEXFET MOSFET | MOSFET P-CH 100V 0.7A 4-DIP | MOSFET P-CH 60V 600MA 4-DIP |
Manufacturer | Vishay | IR | VISHAY |
Product Category | MOSFET | FETs - Single | FETs - Single |
RoHS | E | - | - |
Technology | Si | - | Si |
Mounting Style | Through Hole | - | Through Hole |
Package / Case | HVMDIP-4 | - | - |
Number of Channels | 1 Channel | - | 1 Channel |
Transistor Polarity | P-Channel | - | P-Channel |
Vds Drain Source Breakdown Voltage | 100 V | - | - |
Id Continuous Drain Current | 700 mA | - | - |
Rds On Drain Source Resistance | 1.2 Ohms | - | - |
Vgs th Gate Source Threshold Voltage | 2 V | - | - |
Vgs Gate Source Voltage | 10 V | - | - |
Qg Gate Charge | 8.7 nC | - | - |
Minimum Operating Temperature | - 55 C | - | - |
Maximum Operating Temperature | + 175 C | - | - |
Pd Power Dissipation | 1.3 W | - | - |
Configuration | Single | - | Single |
Channel Mode | Enhancement | - | - |
Packaging | Tube | - | Tube |
Series | IRFD | - | - |
Transistor Type | 1 P-Channel | - | 1 P-Channel |
Brand | Vishay / Siliconix | - | - |
Forward Transconductance Min | 0.6 S | - | - |
Fall Time | 17 ns | - | - |
Product Type | MOSFET | - | - |
Rise Time | 27 ns | - | - |
Factory Pack Quantity | 2500 | - | - |
Subcategory | MOSFETs | - | - |
Typical Turn Off Delay Time | 15 ns | - | - |
Typical Turn On Delay Time | 10 ns | - | - |
Unit Weight | - | - | 0.022575 oz |
Package Case | - | - | DIP-4 |
Pd Power Dissipation | - | - | 1 W |
Vgs Gate Source Voltage | - | - | +/- 20 V |
Id Continuous Drain Current | - | - | - 600 mA |
Vds Drain Source Breakdown Voltage | - | - | - 60 V |
Vgs th Gate Source Threshold Voltage | - | - | - 4 V |
Rds On Drain Source Resistance | - | - | 1.2 Ohms |
Qg Gate Charge | - | - | 11 nC |