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| PartNumber | IRFH3707TRPBF | IRFH3707TRPBF , 2SK1151S | IRFH3707TRPBF QFN8 |
| Description | MOSFET 30V 1 N-CH HEXFET 12.4mOhms 5.4nC | ||
| Manufacturer | Infineon | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | PQFN-8 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 30 V | - | - |
| Id Continuous Drain Current | 29 A | - | - |
| Rds On Drain Source Resistance | 17.9 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 2.35 V | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 5.4 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 2.8 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Reel | - | - |
| Height | 1 mm | - | - |
| Length | 6 mm | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Type | HEXFET Power MOSFET | - | - |
| Width | 5 mm | - | - |
| Brand | Infineon / IR | - | - |
| Forward Transconductance Min | 17 S | - | - |
| Fall Time | 5.6 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 11 ns | - | - |
| Factory Pack Quantity | 4000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 9.9 ns | - | - |
| Typical Turn On Delay Time | 9 ns | - | - |
| Part # Aliases | SP001551876 | - | - |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Infineon / IR |
IRFH3707TRPBF | MOSFET 30V 1 N-CH HEXFET 12.4mOhms 5.4nC | |
| IRFH3707TRPBF-CUT TAPE | Neu und Original | ||
| IRFH3707TRPBF , 2SK1151S | Neu und Original | ||
| IRFH3707TRPBF QFN8 | Neu und Original | ||
| IRFH3707TRPBF. | Neu und Original | ||
Infineon Technologies |
IRFH3707TRPBF | MOSFET N-CH 30V 12A PQFN56 |