IRFH501

IRFH5010TRPBF vs IRFH5010TR2PBF vs IRFH5015TR2PBF

 
PartNumberIRFH5010TRPBFIRFH5010TR2PBFIRFH5015TR2PBF
DescriptionMOSFET 100V 1 N-CH HEXFET 9mOhms 65nCMOSFET MOSFT 100V 100A 9.0mOhm 65nC QgMOSFET MOSFT 150V 56A 31mOhm 33nC Qg
ManufacturerInfineonInfineonInfineon
Product CategoryMOSFETMOSFETMOSFET
RoHSYYY
TechnologySiSiSi
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CasePQFN-8PQFN-8PQFN-8
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage100 V100 V150 V
Id Continuous Drain Current100 A13 A10 A
Rds On Drain Source Resistance9 mOhms9 mOhms31 mOhms
Vgs th Gate Source Threshold Voltage4 V4 V5 V
Vgs Gate Source Voltage20 V20 V20 V
Qg Gate Charge65 nC65 nC33 nC
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C+ 150 C+ 150 C
Pd Power Dissipation250 W3.6 W3.6 W
ConfigurationSingleSingleSingle
Channel ModeEnhancement--
PackagingReelReelReel
Height0.83 mm0.83 mm0.83 mm
Length6 mm6 mm6 mm
Transistor Type1 N-Channel1 N-Channel1 N-Channel
TypeHEXFET Power MOSFET--
Width5 mm5 mm5 mm
BrandInfineon / IRInfineon / IRInfineon / IR
Forward Transconductance Min206 S206 S38 S
Fall Time8.6 ns8.6 ns3.4 ns
Product TypeMOSFETMOSFETMOSFET
Rise Time12 ns12 ns9.7 ns
Factory Pack Quantity4000400400
SubcategoryMOSFETsMOSFETsMOSFETs
Typical Turn Off Delay Time27 ns--
Typical Turn On Delay Time9 ns--
Part # AliasesSP001560282SP001570754SP001570714
Unit Weight--0.070548 oz
Hersteller Teil # Beschreibung RFQ
Infineon Technologies
Infineon Technologies
IRFH5015TRPBF MOSFET 150V SINGLE N-CH 31mOhms 33nC
IRFH5010TR2PBF MOSFET N-CH 100V 13A 5X6 PQFN
IRFH5015TR2PBF MOSFET N-CH 150V 10A 8VQFN
IRFH5010TRPBF MOSFET N-CH 100V 13A 8-PQFN
IRFH5015TRPBF MOSFET N-CH 150V 10A 8VQFN
Infineon / IR
Infineon / IR
IRFH5010TRPBF MOSFET 100V 1 N-CH HEXFET 9mOhms 65nC
IRFH5010TR2PBF MOSFET MOSFT 100V 100A 9.0mOhm 65nC Qg
IRFH5015TR2PBF MOSFET MOSFT 150V 56A 31mOhm 33nC Qg
IRFH5010TRPBF. MOSFET Transistor, FULL REEL
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