 |  | | |
| PartNumber | IRFH5053TR2PBF | IRFH5053 | IRFH5053TR |
| Description | MOSFET N-CH 100V 9.3A PQFN56 | ||
| Manufacturer | - | IOR | IOR |
| Product Category | - | FETs - Single | FETs - Single |
| Packaging | - | Reel | Reel |
| Mounting Style | - | SMD/SMT | SMD/SMT |
| Package Case | - | PQFN-8 | PQFN-8 |
| Technology | - | Si | Si |
| Number of Channels | - | 1 Channel | 1 Channel |
| Configuration | - | Single | Single |
| Transistor Type | - | 1 N-Channel | 1 N-Channel |
| Pd Power Dissipation | - | 3.1 W | 3.1 W |
| Maximum Operating Temperature | - | + 175 C | + 175 C |
| Minimum Operating Temperature | - | - 55 C | - 55 C |
| Fall Time | - | 9.9 ns | 9.9 ns |
| Rise Time | - | 14.6 ns | 14.6 ns |
| Vgs Gate Source Voltage | - | 20 V | 20 V |
| Id Continuous Drain Current | - | 46 A | 46 A |
| Vds Drain Source Breakdown Voltage | - | 100 V | 100 V |
| Rds On Drain Source Resistance | - | 18 mOhms | 18 mOhms |
| Transistor Polarity | - | N-Channel | N-Channel |
| Typical Turn Off Delay Time | - | 18 ns | 18 ns |
| Typical Turn On Delay Time | - | 8.6 ns | 8.6 ns |
| Qg Gate Charge | - | 24 nC | 24 nC |
| Channel Mode | - | Enhancement | Enhancement |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Infineon Technologies |
IRFH5053TRPBF | MOSFET 100V 1 N-CH HEXFET 18mOhms 24nC | |
| IRFH5053TR2PBF | MOSFET N-CH 100V 9.3A PQFN56 | ||
| IRFH5053TRPBF | RF Bipolar Transistors MOSFET 100V 1 N-CH HEXFET 18mOhms 24nC | ||
| IRFH5053 | Neu und Original | ||
| IRFH5053TR | Neu und Original | ||
| IRFH5053TRPBF. | Neu und Original |