IRFH5301

IRFH5301TRPBF vs IRFH5301TR2PBF

 
PartNumberIRFH5301TRPBFIRFH5301TR2PBF
DescriptionMOSFET 30V 1 N-CH HEXFET 1.85mOhms 37nCMOSFET MOSFT 30V 100A 1.85mOhm mx 37nC Qg
ManufacturerInfineonInfineon
Product CategoryMOSFETMOSFET
RoHSYY
TechnologySiSi
Mounting StyleSMD/SMTSMD/SMT
Package / CasePQFN-8PQFN-8
Number of Channels1 Channel1 Channel
Transistor PolarityN-ChannelN-Channel
Vds Drain Source Breakdown Voltage30 V30 V
Id Continuous Drain Current100 A35 A
Rds On Drain Source Resistance1.85 mOhms1.85 mOhms
Vgs th Gate Source Threshold Voltage1.8 V-
Vgs Gate Source Voltage20 V20 V
Qg Gate Charge77 nC37 nC
Minimum Operating Temperature- 55 C- 55 C
Maximum Operating Temperature+ 150 C+ 150 C
Pd Power Dissipation3.6 W3.6 W
ConfigurationSingleSingle
PackagingReelReel
Height0.83 mm0.83 mm
Length6 mm6 mm
Transistor Type1 N-Channel1 N-Channel
Width5 mm5 mm
BrandInfineon TechnologiesInfineon / IR
Forward Transconductance Min218 S218 S
Fall Time23 ns23 ns
Product TypeMOSFETMOSFET
Rise Time78 ns78 ns
Factory Pack Quantity4000400
SubcategoryMOSFETsMOSFETs
Typical Turn Off Delay Time22 ns22 ns
Typical Turn On Delay Time21 ns21 ns
Part # AliasesSP001556462SP001566004
Channel Mode-Enhancement
Unit Weight-0.017637 oz
Hersteller Teil # Beschreibung RFQ
Infineon Technologies
Infineon Technologies
IRFH5301TRPBF MOSFET 30V 1 N-CH HEXFET 1.85mOhms 37nC
IRFH5301TR2PBF MOSFET N-CH 30V 35A 5X6 PQFN
IRFH5301TRPBF MOSFET N-CH 30V 35A 5X6 PQFN
Infineon / IR
Infineon / IR
IRFH5301TR2PBF MOSFET MOSFT 30V 100A 1.85mOhm mx 37nC Qg
IRFH5301TRPBF-CUT TAPE Neu und Original
IRFH5301 Neu und Original
IRFH5301TRPBF,IRFH5301 Neu und Original
IRFH5301TRPBF. Neu und Original
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