IRFH7440

IRFH7440TRPBF vs IRFH7440TR2PBF vs IRFH7440TR

 
PartNumberIRFH7440TRPBFIRFH7440TR2PBFIRFH7440TR
DescriptionMOSFET 40V 85A 2.4mOhm 92nC STrongIRFETMOSFET N-CH 40V 85A 8PQFN
ManufacturerInfineon-International Rectifier
Product CategoryMOSFET-Transistors - FETs, MOSFETs - Single
RoHSY--
TechnologySi-Si
Mounting StyleSMD/SMT-SMD/SMT
Package / CasePQFN-8--
Number of Channels1 Channel-1 Channel
Transistor PolarityN-Channel-N-Channel
Vds Drain Source Breakdown Voltage40 V--
Id Continuous Drain Current159 A--
Rds On Drain Source Resistance2.7 mOhms--
Vgs th Gate Source Threshold Voltage3.9 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge92 nC--
Minimum Operating Temperature- 55 C-- 55 C
Maximum Operating Temperature+ 150 C-+ 150 C
Pd Power Dissipation104 W--
ConfigurationSingle-Single
Channel ModeEnhancement-Enhancement
TradenameStrongIRFET-StrongIRFET
PackagingReel-Reel
Height0.83 mm--
Length6 mm--
Transistor Type1 N-Channel-1 N-Channel
Width5 mm--
BrandInfineon / IR--
Forward Transconductance Min149 S--
Fall Time42 ns-42 ns
Product TypeMOSFET--
Rise Time45 ns-45 ns
Factory Pack Quantity4000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time53 ns-53 ns
Typical Turn On Delay Time12 ns-12 ns
Part # AliasesSP001565996--
Unit Weight0.006808 oz--
Package Case--PQFN-8
Pd Power Dissipation--104 W
Vgs Gate Source Voltage--20 V
Id Continuous Drain Current--159 A
Vds Drain Source Breakdown Voltage--40 V
Vgs th Gate Source Threshold Voltage--3.9 V
Rds On Drain Source Resistance--2.7 mOhms
Qg Gate Charge--92 nC
Forward Transconductance Min--149 S
Hersteller Teil # Beschreibung RFQ
Infineon / IR
Infineon / IR
IRFH7440TRPBF MOSFET 40V 85A 2.4mOhm 92nC STrongIRFET
IRFH7440TRPBF-CUT TAPE Neu und Original
IRFH7440TR Neu und Original
Infineon Technologies
Infineon Technologies
IRFH7440TR2PBF MOSFET N-CH 40V 85A 8PQFN
IRFH7440TRPBF MOSFET N-CH 40V 85A 8PQFN
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