PartNumber | IRFI510GPBF | IRFI510G |
Description | MOSFET N-CH 100V HEXFET MOSFET | MOSFET RECOMMENDED ALT 844-IRFI510GPBF |
Manufacturer | Vishay | Vishay |
Product Category | MOSFET | MOSFET |
RoHS | E | N |
Technology | Si | Si |
Mounting Style | Through Hole | Through Hole |
Package / Case | TO-220-3 | TO-220-3 |
Number of Channels | 1 Channel | - |
Transistor Polarity | N-Channel | - |
Vds Drain Source Breakdown Voltage | 100 V | - |
Id Continuous Drain Current | 4.5 A | - |
Rds On Drain Source Resistance | 540 mOhms | - |
Vgs th Gate Source Threshold Voltage | 2 V | - |
Vgs Gate Source Voltage | 10 V | - |
Qg Gate Charge | 8.3 nC | - |
Minimum Operating Temperature | - 55 C | - |
Maximum Operating Temperature | + 175 C | - |
Pd Power Dissipation | 27 W | - |
Configuration | Single | - |
Channel Mode | Enhancement | - |
Packaging | Tube | Tube |
Height | 15.49 mm | 15.49 mm |
Length | 10.41 mm | 10.41 mm |
Series | IRFI | IRFI |
Transistor Type | 1 N-Channel | - |
Width | 4.7 mm | 4.7 mm |
Brand | Vishay / Siliconix | Vishay / Siliconix |
Forward Transconductance Min | 1.2 S | - |
Fall Time | 9.4 ns | - |
Product Type | MOSFET | MOSFET |
Rise Time | 16 ns | - |
Factory Pack Quantity | 50 | 50 |
Subcategory | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 15 ns | - |
Typical Turn On Delay Time | 6.9 ns | - |
Unit Weight | 0.211644 oz | 0.211644 oz |