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| PartNumber | IRFP048NPBF | IRFP048N | IRFP048NPBF,IRFP048N |
| Description | MOSFET 55V 1 N-CH HEXFET 16mOhms 59.3nC | MOSFET N-CH 55V 64A TO-247AC | |
| Manufacturer | Infineon | IOR | - |
| Product Category | MOSFET | FETs - Single | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | Through Hole | - | - |
| Package / Case | TO-247-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 55 V | - | - |
| Id Continuous Drain Current | 64 A | - | - |
| Rds On Drain Source Resistance | 16 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 4 V | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 89 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 175 C | - | - |
| Pd Power Dissipation | 140 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Tube | - | - |
| Height | 20.7 mm | - | - |
| Length | 15.87 mm | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Type | HEXFET Power MOSFET | - | - |
| Width | 5.31 mm | - | - |
| Brand | Infineon Technologies | - | - |
| Forward Transconductance Min | 22 S | - | - |
| Fall Time | 48 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 78 ns | - | - |
| Factory Pack Quantity | 400 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 32 ns | - | - |
| Typical Turn On Delay Time | 11 ns | - | - |
| Part # Aliases | SP001567000 | - | - |
| Unit Weight | 1.340411 oz | - | - |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Infineon Technologies |
IRFP048NPBF | MOSFET 55V 1 N-CH HEXFET 16mOhms 59.3nC | |
| IRFP048NPBF | MOSFET N-CH 55V 64A TO-247AC | ||
| IRFP048N | MOSFET N-CH 55V 64A TO-247AC | ||
| IRFP048NPBF,IRFP048N | Neu und Original |