IRFP370

IRFP3703PBF vs IRFP3703 vs IRFP3703PBF,IRFP3703

 
PartNumberIRFP3703PBFIRFP3703IRFP3703PBF,IRFP3703
DescriptionMOSFET 30V 1 N-CH HEXFET 2.8mOhms 209nCMOSFET N-CH 30V 210A TO-247AC
ManufacturerInfineon--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleThrough Hole--
Package / CaseTO-247-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage30 V--
Id Continuous Drain Current210 A--
Rds On Drain Source Resistance2.8 mOhms--
Vgs Gate Source Voltage20 V--
Qg Gate Charge209 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 175 C--
Pd Power Dissipation230 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingTube--
Height20.7 mm--
Length15.87 mm--
Transistor Type1 N-Channel--
TypeSmps MOSFET--
Width5.31 mm--
BrandInfineon Technologies--
Fall Time24 ns--
Product TypeMOSFET--
Rise Time123 ns--
Factory Pack Quantity400--
SubcategoryMOSFETs--
Typical Turn Off Delay Time53 ns--
Typical Turn On Delay Time18 ns--
Part # AliasesSP001556744--
Unit Weight1.340411 oz--
Hersteller Teil # Beschreibung RFQ
Infineon Technologies
Infineon Technologies
IRFP3703PBF MOSFET 30V 1 N-CH HEXFET 2.8mOhms 209nC
IRFP3703 MOSFET N-CH 30V 210A TO-247AC
IRFP3703PBF MOSFET 30V 1 N-CH HEXFET 2.8mOhms 209nC
IRFP3703PBF,IRFP3703 Neu und Original
IRFP3703PBF,IRFP3703,FP3 Neu und Original
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