 | | |
| PartNumber | IRFPE50PBF | IRFPE50 |
| Description | MOSFET N-CH 800V HEXFET MOSFET | MOSFET RECOMMENDED ALT 844-IRFPE50PBF |
| Manufacturer | Vishay | Vishay |
| Product Category | MOSFET | MOSFET |
| RoHS | E | N |
| Technology | Si | Si |
| Mounting Style | Through Hole | Through Hole |
| Package / Case | TO-247AC-3 | TO-247-3 |
| Number of Channels | 1 Channel | - |
| Transistor Polarity | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 800 V | - |
| Id Continuous Drain Current | 7.8 A | - |
| Rds On Drain Source Resistance | 1.2 Ohms | - |
| Vgs th Gate Source Threshold Voltage | 2 V | - |
| Vgs Gate Source Voltage | 10 V | - |
| Qg Gate Charge | 200 nC | - |
| Minimum Operating Temperature | - 55 C | - |
| Maximum Operating Temperature | + 150 C | - |
| Pd Power Dissipation | 190 W | - |
| Configuration | Single | - |
| Channel Mode | Enhancement | - |
| Packaging | Tube | Tube |
| Height | 20.82 mm | 20.82 mm |
| Length | 15.87 mm | 15.87 mm |
| Series | IRFPE | IRFPE |
| Transistor Type | 1 N-Channel | - |
| Width | 5.31 mm | 5.31 mm |
| Brand | Vishay / Siliconix | Vishay / Siliconix |
| Forward Transconductance Min | 5.6 S | - |
| Fall Time | 39 ns | - |
| Product Type | MOSFET | MOSFET |
| Rise Time | 38 ns | - |
| Factory Pack Quantity | 500 | 500 |
| Subcategory | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 120 ns | - |
| Typical Turn On Delay Time | 19 ns | - |
| Unit Weight | 1.340411 oz | 1.340411 oz |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Vishay / Siliconix |
IRFPE50PBF | MOSFET N-CH 800V HEXFET MOSFET | |
| IRFPE50 | MOSFET RECOMMENDED ALT 844-IRFPE50PBF | ||
Vishay |
IRFPE50 | MOSFET N-CH 800V 7.8A TO-247AC | |
| IRFPE50PBF | MOSFET N-CH 800V 7.8A TO-247AC | ||
| IRFPE50PBF,IRFPE50,FPE50 | Neu und Original |