 | |  | |
| PartNumber | IRFR15N20DTRPBF | IRFR15N20DTRLP | IRFR15N20DPBF |
| Description | MOSFET 200V 1 N-CH HEXFET PWR MOSFET 165mOhms | MOSFET MOSFT 200V 17A 165mOhm 27nC | MOSFET N-CH 200V 17A DPAK |
| Manufacturer | Infineon | Infineon | IR |
| Product Category | MOSFET | MOSFET | FETs - Single |
| RoHS | Y | Y | - |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | TO-252-3 | TO-252-3 | - |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 200 V | 200 V | - |
| Id Continuous Drain Current | 17 A | 17 A | - |
| Rds On Drain Source Resistance | 165 mOhms | 165 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 5.5 V | - | - |
| Vgs Gate Source Voltage | 30 V | 30 V | - |
| Qg Gate Charge | 27 nC | 27 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 175 C | + 175 C | + 175 C |
| Pd Power Dissipation | 140 W | 3 W | - |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Packaging | Reel | Reel | Tube |
| Height | 2.3 mm | 2.3 mm | - |
| Length | 6.5 mm | 6.5 mm | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Width | 6.22 mm | 6.22 mm | - |
| Brand | Infineon / IR | Infineon / IR | - |
| Forward Transconductance Min | 4 S | - | - |
| Fall Time | 8.9 ns | 8.9 ns | 8.9 ns |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 32 ns | 32 ns | 32 ns |
| Factory Pack Quantity | 2000 | 3000 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 17 ns | 17 ns | 17 ns |
| Typical Turn On Delay Time | 9.7 ns | 9.7 ns | 9.7 ns |
| Part # Aliases | SP001555046 | SP001566130 | - |
| Unit Weight | 0.139332 oz | 0.139332 oz | 0.139332 oz |
| Package Case | - | - | TO-252-3 |
| Pd Power Dissipation | - | - | 140 W |
| Vgs Gate Source Voltage | - | - | 30 V |
| Id Continuous Drain Current | - | - | 17 A |
| Vds Drain Source Breakdown Voltage | - | - | 200 V |
| Vgs th Gate Source Threshold Voltage | - | - | 5.5 V |
| Rds On Drain Source Resistance | - | - | 165 mOhms |
| Qg Gate Charge | - | - | 27 nC |
| Forward Transconductance Min | - | - | 4 S |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Infineon / IR |
IRFR15N20DTRPBF | MOSFET 200V 1 N-CH HEXFET PWR MOSFET 165mOhms | |
| IRFR15N20DTRLP | MOSFET MOSFT 200V 17A 165mOhm 27nC | ||
Infineon Technologies |
IRFR15N20DTRRP | MOSFET N-CH 200V 17A DPAK | |
| IRFR15N20DPBF | MOSFET N-CH 200V 17A DPAK | ||
| IRFR15N20DTRLP | MOSFET N-CH 200V 17A DPAK | ||
| IRFR15N20DTRPBF | RF Bipolar Transistors MOSFET 200V 1 N-CH HEXFET PWR MOSFET 165mOhms | ||
| IRFR15N20D | MOSFET Transistor, N-Channel, TO-252AA | ||
| IRFR15N20D FR15N20D | Neu und Original | ||
| IRFR15N20DTRL | Neu und Original |